Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices
Rodriguez-Fernandez, A., Cagli, C., Perniola, L., Suñé, J., Miranda, E.
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article
Characterization of HfO2-based devices with indication of second order memristor effects
Rodriguez-Fernandez, A., Cagli, C., Perniola, L., Miranda, E., Suñé, J.
Published in Microelectronic engineering (05.08.2018)
Published in Microelectronic engineering (05.08.2018)
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Journal Article
Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells
Alayan, M., Bagatin, M., Gerardin, S., Paccagnella, A., Larcher, L., Vianello, E., Nowak, E., De Salvo, B., Perniola, L.
Published in IEEE transactions on nuclear science (01.08.2017)
Published in IEEE transactions on nuclear science (01.08.2017)
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Journal Article
Carbon-doped GeTe: A promising material for Phase-Change Memories
Betti Beneventi, G., Perniola, L., Sousa, V., Gourvest, E., Maitrejean, S., Bastien, J.C., Bastard, A., Hyot, B., Fargeix, A., Jahan, C., Nodin, J.F., Persico, A., Fantini, A., Blachier, D., Toffoli, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P., Bensahel, D., Mazoyer, P., Annunziata, R., Zuliani, P., Boulanger, F.
Published in Solid-state electronics (01.11.2011)
Published in Solid-state electronics (01.11.2011)
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Conference Proceeding
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations
Vianello, E., Driussi, F., Perniola, L., Molas, G., Colonna, J.-P, De Salvo, B., Selmi, L.
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
Accurate analysis of parasitic current overshoot during forming operation in RRAMs
Tirano, S., Perniola, L., Buckley, J., Cluzel, J., Jousseaume, V., Muller, Ch, Deleruyelle, D., De Salvo, B., Reimbold, G.
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Conference Proceeding
Material engineering of GexTe100−x compounds to improve phase-change memory performances
Navarro, G., Sousa, V., Persico, A., Pashkov, N., Toffoli, A., Bastien, J.-C., Perniola, L., Maitrejean, S., Roule, A., Zuliani, P., Annunziata, R., De Salvo, B.
Published in Solid-state electronics (01.11.2013)
Published in Solid-state electronics (01.11.2013)
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Journal Article
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices
Suri, M., Bichler, O., Hubert, Q., Perniola, L., Sousa, V., Jahan, C., Vuillaume, D., Gamrat, C., DeSalvo, B.
Published in Solid-state electronics (01.01.2013)
Published in Solid-state electronics (01.01.2013)
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Journal Article
Degradation of floating-gate memory reliability by few electron phenomena
Molas, G., Deleruyelle, D., De Salvo, B., Ghibaudo, G., GelyGely, M., Perniola, L., Lafond, D., Deleonibus, S.
Published in IEEE transactions on electron devices (01.10.2006)
Published in IEEE transactions on electron devices (01.10.2006)
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Journal Article
Emerging resistive memories for low power embedded applications and neuromorphic systems
DeSalvo, B., Vianello, E., Thomas, O., Clermidy, F., Bichler, O., Gamrat, C., Perniola, L.
Published in 2015 IEEE International Symposium on Circuits and Systems (ISCAS) (01.05.2015)
Published in 2015 IEEE International Symposium on Circuits and Systems (ISCAS) (01.05.2015)
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Conference Proceeding
Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity
Privitera, S., Garozzo, C., Alberti, A., Perniola, L., De Salvo, B.
Published in AIP advances (01.01.2013)
Published in AIP advances (01.01.2013)
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Journal Article
Reliability of charge trapping memories with high- k control dielectrics (Invited Paper)
Molas, G., Bocquet, M., Vianello, E., Perniola, L., Grampeix, H., Colonna, J.P., Masarotto, L., Martin, F., Brianceau, P., Gély, M., Bongiorno, C., Lombardo, S., Pananakakis, G., Ghibaudo, G., De Salvo, B.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Program efficiency and high temperature retention of SiN/high- K based memories
Vianello, E., Bocquet, M., Driussi, F., Perniola, L., Molas, G., Selmi, L.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells
Cueto, O., Jahan, C., Sousa, V., Nodin, J.F., Syoud, S., Perniola, L., Fantini, A., Maitrejean, S., Toffoli, A., de Salvo, B., Boulanger, F.
Published in Microelectronic engineering (01.05.2011)
Published in Microelectronic engineering (01.05.2011)
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Journal Article
Conference Proceeding
Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance
Sousa, V., Navarro, G., Castellani, N., Coue, M., Cueto, O., Sabbione, C., Noe, P., Perniola, L., Blonkowski, S., Zuliani, P., Annunziata, R.
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Conference Proceeding
Journal Article
High temperature reliability of μtrench Phase-Change Memory devices
Navarro, G., Souiki, S., Persico, A., Sousa, V., Nodin, J.-F., Jahan, C., Aussenac, F., Delaye, V., Cueto, O., Perniola, L., De Salvo, B.
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Conference Proceeding
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories
BOCQUET, M, MOLAS, G, TOFFOLI, A, DELEONIBUS, S, GHIBAUDO, G, PANANAKAKIS, G, DE SALVO, B, PERNIOLA, L, GARROS, X, BUCKLEY, J, GELY, M, COLONNA, J. P, GRAMPEIX, H, MARTIN, F, VIDAL, V
Published in Solid-state electronics (01.07.2009)
Published in Solid-state electronics (01.07.2009)
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Conference Proceeding
Journal Article
Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory
JACOB, S, DE SALVO, B, DUFOURCQ, J, JALAGUIER, E, PEDRON, T, BOULANGER, F, DELEONIBUS, S, PERNIOLA, L, FESTES, G, BODNAR, S, COPPARD, R, THIERY, J. F, PATE-CAZAL, T, BONGIORNO, C, LOMBARDO, S
Published in Solid-state electronics (01.09.2008)
Published in Solid-state electronics (01.09.2008)
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Conference Proceeding
Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories
Perniola, L., Bernardini, S., Iannaccone, G., Masson, P., Barbara De Salvo, Ghibaudo, G., Gerardi, C.
Published in IEEE transactions on nanotechnology (01.05.2005)
Published in IEEE transactions on nanotechnology (01.05.2005)
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Conference Proceeding