Study of the formation, evolution, and dissolution of interfacial defects in silicon wafer bonding
Vincent, S., Penot, J.-D., Radu, I., Letertre, F., Rieutord, F.
Published in Journal of applied physics (01.05.2010)
Published in Journal of applied physics (01.05.2010)
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Journal Article
Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations
Rieutord, F., Mazen, F., Reboh, S., Penot, J. D., Bilteanu, L., Crocombette, J. P., Vales, V., Holy, V., Capello, L.
Published in Journal of applied physics (21.04.2013)
Published in Journal of applied physics (21.04.2013)
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Journal Article
Mechanism of Thermal Silicon Oxide Direct Wafer Bonding
Ventosa, C., Morales, C., Libralesso, L., Fournel, F., Papon, A. M., Lafond, D., Moriceau, H., Penot, J. D., Rieutord, F.
Published in Electrochemical and solid-state letters (2009)
Published in Electrochemical and solid-state letters (2009)
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Journal Article
Study of the formation, evolution, and dissolution of interfacial defectsin silicon wafer bonding
Vincent, S., Penot, J.-D., Radu, I., Letertre, F., Rieutord, F.
Published in Journal of applied physics (04.05.2010)
Published in Journal of applied physics (04.05.2010)
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Journal Article
Defect Formation at Hydrophilic Silicon Bonding Interfaces
Rieutord, François, Vincent, Sebastien, Penot, Jean-Daniel, Moriceau, Hubert, Radu, Ionut
Published in ECS transactions (01.10.2010)
Published in ECS transactions (01.10.2010)
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Journal Article