Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors
Han, Tiecheng, Peng, Xiaocan, Zhang, Wenqian, Wang, Tongju, Yang, Liu, Zhao, Peng
Published in Microelectronics (01.09.2023)
Published in Microelectronics (01.09.2023)
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