Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer
Pu, Taofei, Chen, Yong, Li, Xiaobo, Peng, Taowei, Wang, Xiao, Li, Jian, He, Wei, Ben, Jianwei, Lu, Youming, Liu, Xinke, Ao, Jin-Ping
Published in Journal of physics. D, Applied physics (07.10.2020)
Published in Journal of physics. D, Applied physics (07.10.2020)
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Journal Article
Zinc oxide-based light-emitting diode and manufacturing method thereof
PENG TAOWEI, ZHAI XIAOQI, WANG XIAO, WANG TINGTING, YE QIONG, AO JINPING
Year of Publication 09.10.2020
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Year of Publication 09.10.2020
Patent