Worst-case bias during total dose irradiation of SOI transistors
Ferlet-Cavrois, V., Colladant, T., Paillet, P., Leray, J.L., Musseau, O., Schwank, J.R., Shaneyfelt, M.R., Pelloie, J.L., du Port de Poncharra, J.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations
Munteanu, D., Weiser, D.A., Cristoloveanu, S., Faynot, O., Pelloie, J.-L., Fossum, J.G.
Published in IEEE transactions on electron devices (01.08.1998)
Published in IEEE transactions on electron devices (01.08.1998)
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Journal Article
Hot-carrier effects and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFETs
Shing-Hwa Renn, Pelloie, J.-L., Balestra, F.
Published in IEEE transactions on electron devices (01.11.1998)
Published in IEEE transactions on electron devices (01.11.1998)
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Journal Article
Laser probing of bipolar amplification in 0.25- mu m MOS/SOI transistors
Musseau, O, Ferlet-Cavrois, V, Pelloie, J L, Buchner, S, McMorrow, D, Campbell, AB
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling
Benson, J., D'Halleweyn, N.V., Redman-White, W., Easson, C.A., Uren, M.J., Faynot, O., Pelloie, J.-L.
Published in IEEE transactions on electron devices (01.05.2001)
Published in IEEE transactions on electron devices (01.05.2001)
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Journal Article
New approach for SOI devices small-signal parameters extraction
Bracale, A, Ferlet-Cavrois, V, Fel, N, Pasquet, D, Gautier, J L, Pelloie, J L, Du Port de Poncharra, J
Published in Analog integrated circuits and signal processing (01.11.2000)
Published in Analog integrated circuits and signal processing (01.11.2000)
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Journal Article
0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters
Vanmackelberg, M, Raynaud, C, Faynot, O, Pelloie, J.-L, Tabone, C, Grouillet, A, Martin, F, Dambrine, G, Picheta, L, Mackowiak, E, Llinares, P, Sevenhans, J, Compagne, E, Fletcher, G, Flandre, D, Dessard, V, Vanhoenacker, D, Raskin, J.-P
Published in Solid-state electronics (01.03.2002)
Published in Solid-state electronics (01.03.2002)
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Journal Article
Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
Brisset, C., Ferlet-Cavrois, V., Flament, O., Musseau, O., Leray, J.L., Pelloie, J.L., Escoffier, R., Michez, A., Cirba, C., Bordure, G.
Published in IEEE transactions on nuclear science (01.12.1996)
Published in IEEE transactions on nuclear science (01.12.1996)
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Journal Article
Total dose induced latch in short channel NMOS/SOI transistors
Ferlet-Cavrois, V., Quoizola, S., Musseau, O., Flament, O., Leray, J.L., Pelloie, J.L., Raynaud, C., Faynot, O.
Published in IEEE transactions on nuclear science (01.12.1998)
Published in IEEE transactions on nuclear science (01.12.1998)
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Journal Article
Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI N-MOSFETs
Shing-Hwa Renn, Rauly, E., Pelloie, J.-L., Balestra, F.
Published in IEEE transactions on electron devices (01.05.1998)
Published in IEEE transactions on electron devices (01.05.1998)
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Journal Article
Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor
Ferlet-Cavrois, V., Musseau, O., Leray, J.-L., Pelloie, J.-L., Raynaud, C.
Published in IEEE transactions on electron devices (01.06.1997)
Published in IEEE transactions on electron devices (01.06.1997)
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Journal Article
A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P-channel partially and fully depleted unibond and SIMOX MOSFETs
Shing-Hwa Renn, Raynaud, C., Pelloie, J.-L., Balestra, F.
Published in IEEE transactions on electron devices (01.10.1998)
Published in IEEE transactions on electron devices (01.10.1998)
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Journal Article
CMOS/SOI technologies for low-power and low-voltage circuits
Pelloie, J.L., Raynaud, C., Faynot, O., Grouillet, A., Du Port de Pontcharra, J.
Published in Microelectronic engineering (1999)
Published in Microelectronic engineering (1999)
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Journal Article
Conference Proceeding
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)
Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J.L., Faynot, O., Raynaud, C., Pelloie, J.L.
Published in IEEE transactions on nuclear science (01.06.2000)
Published in IEEE transactions on nuclear science (01.06.2000)
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Journal Article
A new method for characteristic impedance determination on lossy substrate
Bracale, A., Pasquet, D., Gautier, J.L., Fel, N., Ferlet, V., Pelloie, J.L.
Published in 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) (2000)
Published in 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) (2000)
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Conference Proceeding
Journal Article
Charge collection in submicron CMOS/SOI technology
Musseau, O., Ferlet-Cavrois, V., Campbell, A.B., Knudson, A.R., Stapor, W.J., McDonald, P.T., Pelloie, J.L., Raynaud, C.
Published in IEEE transactions on nuclear science (01.12.1997)
Published in IEEE transactions on nuclear science (01.12.1997)
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Journal Article
DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics
Dentan, M., Abbon, P., Delagnes, E., Fourches, N., Lachartre, D., Lugiez, F., Paul, B., Rouger, M., Truche, R., Blanc, J.P., Leroux, C., Delevoye-Orsier, E., Pelloie, J.L., de Pontcharra, J., Flament, O., Guebhard, J.M., Leray, J.L., Montaron, J., Musseau, O., Vitez, A., Blanquart, L., Aubert, J.J., Bonzom, V., Delpierre, P., Habrard, M.C., Mekkaoui, A., Potheau, R., Ardelean, J., Hrisoho, A., Breton, D.
Published in IEEE transactions on nuclear science (01.06.1996)
Published in IEEE transactions on nuclear science (01.06.1996)
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Journal Article
Radiation effects on SOI analog devices parameters
Flament, O., Leray, J.L., Martin, J.L., Montaron, J., Raffaelli, M., Blanc, J.P., Delevoye, E., Gautier, J., Pelloie, J.L., de Poncharra, J., Truche, R., Delagnes, E., Dentan, M., Fourches, N.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.06.1994)
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.06.1994)
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Journal Article
Conference Proceeding