Editorial Special Issue on "Memory Devices and Technologies for the Next Decade"
Compagnoni, Christian Monzio, Kang, Jinfeng, Shih, Yen-Hao, Du, Pei-Ying Penny, Kim, Tae-Hun, Mouli, Chandra, Yang, Joshua, Roy, Kaushik
Published in IEEE transactions on electron devices (01.04.2020)
Published in IEEE transactions on electron devices (01.04.2020)
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Journal Article
A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash
Hsu, Tzu-Hsuan, Lue, Hang-Ting, Du, Pei-Ying, Chen, Wei-Chen, Yeh, Teng-Hao, Lee, Lou, Chiu, Chia-Jung, Wang, Keh-Chung, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling Oxide
Jhang, Pei-Ci, Lu, Chi-Pin, Shieh, Jung-Yu, Yang, Ling-Wu, Yang, Tahone, Chen, Kuang-Chao, Lu, Chih-Yuan, Lue, Hang-Ting, Du, Pei-Ying, Lu, Chih-Yuan
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method-Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type Devices
Lue, Hang-Ting, Du, Pei-Ying, Wang, Szu-Yu, Hsieh, Kuang-Yeu, Liu, Rich, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Z-Interference and Z-Disturbance in Vertical Gate-Type 3-D NAND
Yeh, Teng-Hao Elton, Wei-Chen Chen, Hsu, Tzu-Hsuan Bruce, Du, Pei-Ying Penny, Chih-Chang Hsieh, Hang-Ting Lue, Yen-Hao Shih, Ya-Chin King, Chih-Yuan Lu
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices
Pei-Ying Du, Hang-Ting Lue, Szu-Yu Wang, Tiao-Yuan Huang, Kuang-Yeu Hsieh, Liu, R., Chih-Yuan Lu
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
A Monte Carlo simulation method to predict large-density NAND product memory window from small-array test element group (TEG) verified on a 3D NAND Flash test chip
Chih-Chang Hsieh, Hang-Ting Lue, Tzu-Hsuan Hsu, Pei-Ying Du, Kuang-Hao Chiang, Chih-Yuan Lu
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
Understanding barrier engineered charge-trapping NAND flash devices with and without high-K dielectric
Hang-Ting Lue, Sheng-Chih Lai, Tzu-Hsuan Hsu, Pei-Ying Du, Szu-Yu Wang, Kuang-Yeu Hsieh, Liu, R., Chih-Yuan Lu
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
The impact of melting during reset operation on the reliability of phase change memory
Pei-Ying Du, Jau-Yi Wu, Tzu-Hsuan Hsu, Ming-Hsiu Lee, Tien-Yen Wang, Huai-Yu Cheng, Erh-Kun Lai, Sheng-Chih Lai, Hsiang-Lan Lung, SangBum Kim, BrightSky, M. J., Yu Zhu, Mittal, S., Cheek, R., Raoux, S., Joseph, E. A., Schrott, A., Jing Li, Chung Lam
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
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Conference Proceeding
First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures
Sung, Cheng-Lin, Fan, Sheng-Ting, Lue, Hang-Ting, Chen, Wei-Chen, Du, Pei-Ying, Yeh, Teng-Hao, Wang, Keh-Chung, Lu, Chih-Yuan
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
A high-endurance (≫100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface
Szu-Yu Wang, Hang-Ting Lue, Tzu-Hsuan Hsu, Pei-Ying Du, Sheng-Chih Lai, Yi-Hsuan Hsiao, Shih-Ping Hong, Ming-Tsung Wu, Fang-Hao Hsu, Nan-Tzu Lian, Chi-Pin Lu, Jung-Yu Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Kuang-Yeu Hsieh, Chih-Yuan Lu
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
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Conference Proceeding
An Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window (>10V) and Excellent 100K Endurance
Du, Pei-Ying, Lue, Hang-Ting, Yeh, Teng-Hao, Hsu, Tzu-Hsuan, Chen, Wei-Chen, Huang, Chia-Tze, Lee, Guan-Ru, Hung, Min-Feng, Chiu, Chia-Jung, Wang, Keh-Chung, Lu, Chih-Yuan
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
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Conference Proceeding
A Novel Gate-Sensing and Channel-Sensing Transient Analysis Method for Real-Time Monitoring of Charge Vertical Location in Sonos-Type Devices and its Applications in Reliability Studies
Hang-Ting Lue, Pei-Ying Du, Szu-Yu Wang, Erh-Kun Lai, Kuang-Yeu Hsieh, Rich Liu, Chih-Yuan Lu
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Conference Proceeding
Study of the charge-trapping characteristics of silicon-rich nitride thin films using the gate-sensing and channel-sensing (GSCS) method
Chi-Pin Lu, Jung-Yu Hsieh, Pei-Ying Du, Hang-Ting Lue, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
A physics-based Quasi-2D model to understand the wordline (WL) interference effects of junction-free structure of 3D NAND and experimental study in a 3D NAND flash test chip
Wei-Chen Chen, Hang-Ting Lue, Chih-Chang Hsieh, Yung-Chun Lee, Pei-Ying Du, Tzu-Hsuan Hsu, Kuo-Pin Chang, Keh-Chung Wang, Chih-Yuan Lu
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability
Hang-Ting Lue, Pei-Ying Du, Wei-Chen Chen, Yung-Chun Lee, Tzu-Hsuan Hsu, Teng-Hao Yeh, Kuo-Pin Chang, Chih-Chang Hsieh, Chiatze Huang, Guan-Ru Lee, Chih-Ping Chen, Chieh-Fang Chen, Chia-Jung Chiu, Chen, Y. J., Lu, W. P., Tahone Yang, Kuang-Chao Chen, Chun-Hsiung Hung, Keh-Chung Wang, Chih-Yuan Lu
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method
Liao, Jeng-Hwa, Lin, Hsing-Ju, Lue, Hang-Ting, Du, Pei-Ying, Hsieh, Jung-Yu, Yang, Ling-Wu, Yang, Tahone, Chen, Kuang-Chao, Lu, Chih-Yuan
Published in Solid-state electronics (01.03.2013)
Published in Solid-state electronics (01.03.2013)
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Journal Article
Theoretical Analysis of Planar Flat Floating Gate NAND Flash Device and Experimental Study of Floating-Gate (FG) / Charge-Trapping (CT) Fusion Device for Comprehensive Understanding of Charge Storage and Operation Principle
Hang-Ting Lue, Pei-Ying Du, Lo, Roger, Chih-Yuan Lu
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
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Conference Proceeding
A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity
Hang-Ting Lue, Tzu-Hsuan Hsu, Chen-Jun Wu, Wei-Chen Chen, Teng-Hao Yeh, Kuo-Pin Chang, Chih-Chang Hsieh, Pei-Ying Du, Yi-Hsuan Hsiao, Yu-Wei Jiang, Guan-Ru Lee, Lo, Roger, Yan-Ru Su, Chiatze Huang, Sheng-Chih Lai, Li-Yang Liang, Chieh-Fang Chen, Min-Feng Hung, Chih-Wei Hu, Chia-Jung Chiu, Chih-Yuan Lu
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article