Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon
Murin, L. I., Lastovskii, S. B., Tolkacheva, E. A., Markevich, V. P., Peaker, A. R., Svensson, B. G.
Published in Physica status solidi. A, Applications and materials science (01.11.2016)
Published in Physica status solidi. A, Applications and materials science (01.11.2016)
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Journal Article
Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect
Zhao, Ce Z., Zhang, Jian F., Chang, Mo Huai, Peaker, A. R., Hall, Stephen, Groeseneken, Guido, Pantisano, Luigi, De Gendt, Stefan, Heyns, Marc
Published in IEEE transactions on electron devices (01.07.2008)
Published in IEEE transactions on electron devices (01.07.2008)
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Journal Article
Laplace deep level transient spectroscopy: Embodiment and evolution
Peaker, A.R., Markevich, V.P., Hawkins, I.D., Hamilton, B., Bonde Nielsen, K., Gościński, K.
Published in Physica. B, Condensed matter (01.08.2012)
Published in Physica. B, Condensed matter (01.08.2012)
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Journal Article
Conference Proceeding
Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN
Kruszewski, P., Markevich, V. P., Peaker, A. R., Plesiewicz, J., Prystawko, P., Halsall, M. P., Sun, L.
Published in Applied physics letters (27.11.2023)
Published in Applied physics letters (27.11.2023)
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Journal Article
Defect reactions associated with divacancy elimination in silicon
Markevich, V P, Peaker, A R, Lastovskii, S B, Murin, L I, Lindström, J L
Published in Journal of physics. Condensed matter (08.10.2003)
Published in Journal of physics. Condensed matter (08.10.2003)
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Journal Article
Conference Proceeding
Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates
Dawe, C. A., Markevich, V. P., Halsall, M. P., Hawkins, I. D., Peaker, A. R., Nandi, A., Sanyal, I., Kuball, M.
Published in Journal of applied physics (28.07.2024)
Published in Journal of applied physics (28.07.2024)
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Journal Article
The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers
Sun, L., Kruszewski, P., Markevich, V. P., Dawe, C. A., Peaker, A. R., Crowe, I. F., Plesiewicz, J., Prystawko, P., Grzanka, Sz, Grzanka, E., Jakiela, R., Binks, D., Halsall, M. P.
Published in Journal of applied physics (07.05.2024)
Published in Journal of applied physics (07.05.2024)
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Journal Article
Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy
Murphy, J. D., Grant, N. E., Pain, S. L., Niewelt, T., Wratten, A., Khorani, E., Markevich, V. P., Peaker, A. R., Altermatt, P. P., Lord, J. S., Yokoyama, K.
Published in Journal of applied physics (14.08.2022)
Published in Journal of applied physics (14.08.2022)
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Journal Article
Implantation defects and n-type doping in Ge and Ge rich SiGe
Peaker, A.R., Markevich, V.P., Hamilton, B., Hawkins, I.D., Slotte, J., Kuitunen, K., Tuomisto, F., Satta, A., Simoen, E., Abrosimov, N.V.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Journal Article
Conference Proceeding
Reconfigurations and diffusion of trivacancy in silicon
Markevich, V.P., Peaker, A.R., Hamilton, B., Lastovskii, S.B., Murin, L.I., Coutinho, J., Markevich, A.V., Rayson, M.J., Briddon, P.R., Svensson, B.G.
Published in Physica. B, Condensed matter (01.08.2012)
Published in Physica. B, Condensed matter (01.08.2012)
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Journal Article
Conference Proceeding
Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques
Markevich, V. P., Vaqueiro-Contreras, M., Lastovskii, S. B., Murin, L. I., Halsall, M. P., Peaker, A. R.
Published in Journal of applied physics (14.12.2018)
Published in Journal of applied physics (14.12.2018)
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Journal Article
Passivation of thermally-induced defects with hydrogen in float-zone silicon
De Guzman, J A T, Markevich, V P, Hiller, D, Hawkins, I D, Halsall, M P, Peaker, A R
Published in Journal of physics. D, Applied physics (08.07.2021)
Published in Journal of physics. D, Applied physics (08.07.2021)
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Journal Article
The vacancy–donor pair in unstrained silicon, germanium and SiGe alloys
Peaker, A R, Markevich, V P, Auret, F D, Dobaczewski, L, Abrosimov, N
Published in Journal of physics. Condensed matter (08.06.2005)
Published in Journal of physics. Condensed matter (08.06.2005)
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Journal Article
Conference Proceeding
Vacancy-related complexes in neutron-irradiated silicon
Kovačević, I, Markevich, V P, Hawkins, I D, Pivac, B, Peaker, A R
Published in Journal of physics. Condensed matter (08.06.2005)
Published in Journal of physics. Condensed matter (08.06.2005)
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Journal Article
Conference Proceeding
Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys
Markevich, V.P., Dobaczewski, L., Bonde Nielsen, K., Litvinov, V.V., Petukh, A.N., Pokotilo, Yu.M., Abrosimov, N.V., Peaker, A.R.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Journal Article
Conference Proceeding
Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks
EFTHYMIOU, E, BERNARDINI, S, VOLKOS, S. N, HAMILTON, B, ZHANG, J. F, UPPAL, H. J, PEAKER, A. R
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
Journal Article
Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
Markevich, V P, Murin, L I, Lastovskii, S B, Medvedeva, I F, Komarov, B A, Lindström, J L, Peaker, A R
Published in Journal of physics. Condensed matter (08.06.2005)
Published in Journal of physics. Condensed matter (08.06.2005)
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Journal Article
Conference Proceeding
Stable and metastable configurations of iron atoms in SiGe alloys
Kolkovsky, Vl, Mesli, A, Dobaczewski, L, Abrosimov, N V, Zytkiewicz, Z R, Peaker, A R
Published in Journal of physics. Condensed matter (08.06.2005)
Published in Journal of physics. Condensed matter (08.06.2005)
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Journal Article
Conference Proceeding