Angle-Corrected Imaging Transcranial Doppler Sonography versus Imaging and Nonimaging Transcranial Doppler Sonography in Children with Sickle Cell Disease
Krejza, J, Rudzinski, W, Pawlak, M.A, Tomaszewski, M, Ichord, R, Kwiatkowski, J, Gor, D, Melhem, E.R
Published in American Journal of Neuroradiology (01.09.2007)
Published in American Journal of Neuroradiology (01.09.2007)
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Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects
Pawlak, M.A., Lauwers, A., Janssens, T., Anil, K.G., Opsomer, K., Maex, K., Vantomme, A., Kittl, J.A.
Published in IEEE electron device letters (01.02.2006)
Published in IEEE electron device letters (01.02.2006)
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Linewidth effect and phase control in Ni fully silicided gates
Kittl, J.A., Lauwers, A., Hoffmann, T., Veloso, A., Kubicek, S., Niwa, M., van Dal, M.J.H., Pawlak, M.A., Demeurisse, C., Vrancken, C., Brijs, B., Absil, P., Biesemans, S.
Published in IEEE electron device letters (01.08.2006)
Published in IEEE electron device letters (01.08.2006)
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CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS: \hbox\hbox, and \hbox\hbox) on HfSiON
Kittl, J.A., Lauwers, A., Veloso, A., Hoffmann, T., Kubicek, S., Niwa, M., van Dal, M.J.H., Pawlak, M.A., Brus, S., Demeurisse, C., Vrancken, C., Absil, P., Biesemans, S.
Published in IEEE electron device letters (01.12.2006)
Published in IEEE electron device letters (01.12.2006)
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Journal Article
Modulation of the effective work function of fully-silicided (FUSI) gate stacks
Kittl, J.A., Lauwers, A., Pawlak, M.A., Veloso, A., Yu, H.Y., Chang, S.Z., Hoffmann, T., Pourtois, G., Brus, S., Demeurisse, C., Vrancken, C., Absil, P.P., Biesemans, S.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates
Kittl, J.A., Pawlak, M.A., Lauwers, A., Demeurisse, C., Hoffmann, T., Veloso, A., Anil, K.G., Kubicek, S., Niwa, M., van Dal, M.J.H., Richard, O., Jurczak, M., Vrancken, C., Chiarella, T., Brus, S., Maex, K., Biesemans, S.
Published in Microelectronic engineering (01.11.2006)
Published in Microelectronic engineering (01.11.2006)
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Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
Kittl, J.A., Pawlak, M.A., Lauwers, A., Demeurisse, C., Opsomer, K., Anil, K.G., Vrancken, C., van Dal, M.J.H., Veloso, A., Kubicek, S., Absil, P., Maex, K., Biesemans, S.
Published in IEEE electron device letters (01.01.2006)
Published in IEEE electron device letters (01.01.2006)
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High- k dielectrics for future generation memory devices (Invited Paper)
Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates
KITTL, J. A, PAWLAK, M. A, ABSIL, P, MAEX, K, BIESEMANS, S, LAUWERS, A, DEMEURISSE, C, OPSOMER, K, ANIL, K. G, VRANCKEN, C, VAN DAL, M. J. H, VELOSO, A, KUBICEK, S
Published in IEEE electron device letters (2006)
Published in IEEE electron device letters (2006)
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(Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications
Swerts, Johan, Salimullah, M.M., Popovici, M., Kim, M.-S., Pawlak, M.A., Delabie, Annelies, Schaekers, M., Tomida, K., Kaczer, B., Opsomer, K., Vrancken, C., Debusschere, I, Altimime, L., Kittl, J.A., Van Elshocht, Sven
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
Pawlak, M.A., Kittl, J.A., Chamirian, O., Veloso, A., Lauwers, A., Schram, T., Maex, K., Vantomme, A.
Published in Microelectronic engineering (01.10.2004)
Published in Microelectronic engineering (01.10.2004)
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Conference Proceeding
Cost-Effective Low V Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and \hbox\hbox Coimplant (nMOS)
Lauwers, A., Veloso, A., Chang, S.-Z., Yu, H.Y., Hoffmann, T., Kerner, C., Demand, M., Rothschild, A., Niwa, M., Satoru, I., Mitsuhashi, R., Ameen, M., Whittemore, G., Pawlak, M.A., Vrancken, C., Demeurisse, C., Mertens, S., Vandervorst, W., Absil, P., Biesemans, S., Kittl, J.A.
Published in IEEE electron device letters (01.01.2008)
Published in IEEE electron device letters (01.01.2008)
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Cost-Effective Low Vt Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and Yb+P Coimplant (nMOS)
LAUWERS, A, VELOSO, A, MITSUHASHI, R, AMEEN, M, WHITTEMORE, G, PAWLAK, M. A, VRANCKEN, C, DEMEURISSE, C, MERTENS, S, VANDERVORST, W, ABSIL, P, BIESEMANS, S, CHANG, S.-Z, KITTL, J. A, YU, H. Y, HOFFMANN, T, KERNER, C, DEMAND, M, ROTHSCHILD, A, NIWA, M, SATORU, I
Published in IEEE electron device letters (2008)
Published in IEEE electron device letters (2008)
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Investigation of iridium as a gate electrode for deep sub-micron CMOS technology
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Conference Proceeding
Scalability of Ni FUSI gate processes: phase and Vt control to 30 nm gate lengths
Kittl, J.A., Veloso, A., Lauwers, A., Anil, K.G., Demeurisse, C., Kubicek, S., Niwa, M., van Dal, M.J.H., Richard, O., Pawlak, M.A., Jurczak, M., Vrancken, C., Chiarella, T., Brus, S., Maex, K., Biesemans, S.
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
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Conference Proceeding
Dual Work Function Phase Controlled Ni-FUSI CMOS (NiSi NMOS, Ni2Si or Ni31Si12 PMOS): Manufacturability, Reliability & Process Window Improvement by Sacrificial SiGe Cap
Kittl, J.A., Biesemans, S., Jurczak, M., Absil, P., Niwa, M., Bender, H., Richard, O., Chiarella, T., Kerner, C., Kubicek, S., Demeurisse, C., Yu, H.Y., Pawlak, M.A., Tigelaar, H., Sijmus, B., Shickova, A., Kauerauf, T., Vrancken, C., Locorotondo, S., de Marneffe, J.-F., Brus, S., Lauwers, A., Hoffmann, T., Veloso, A.
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Menou, N., Wang, X.P., Kaczer, B., Polspoel, W., Popovici, M., Opsomer, K., Pawlak, M.A., Knaepen, W., Detavernier, C., Blomberg, T., Pierreux, D., Swerts, J., Maes, J.W., Favia, P., Bender, H., Brijs, B., Vandervorst, W., Van Elshocht, S., Wouters, D.J., Biesemans, S., Kittl, J.A.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding
Plasma Enhanced Atomic Layer Deposited Ru for MIMCAP Applications
Swerts, Johan, Salimullah, M.M., Popovici, M., Kim, M.-S., Pawlak, M.A., Delabie, A., Schaekers, M., Tomida, K., Kaczer, B., Opsomer, K., Vrancken, C., Debusschere, I, Altimime, L., Kittl, J.A., Van Elshocht, S.
Published in Meeting abstracts (Electrochemical Society) (01.08.2011)
Published in Meeting abstracts (Electrochemical Society) (01.08.2011)
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Journal Article
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON
Lauwers, A., Veloso, A., Hoffmann, T., van Dal, M.J.H., Vrancken, C., Brus, S., Locorotondo, S., de Marneffe, J.-F., Sijmus, B., Kubicek, S., Chiarella, T., Pawlak, M.A., Opsomer, K., Niwa, M., Mitsuhashi, R., Anil, K.G., Yu, H.Y., Demeurisse, C., Verbeeck, R., de Potter, M., Absil, P., Maex, K., Jurczak, M., Biesemans, S., Kittl, J.A.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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