Properties of GaInAs(P)/InP multilayers and superlattices grown by MOVPE at atmospheric pressure
André, J.P., Patillon, J.N., Schiller, C., Lesiourd, J.Y., Vlaeminck, O., Malhouroux, N.
Published in Journal of crystal growth (01.02.1991)
Published in Journal of crystal growth (01.02.1991)
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Journal Article
Conference Proceeding
GaInP-AlGaInP-GaAs heterostructures grown by MOVPE at atmospheric pressure
André, J.P., Dupont-Nivet, E., Moroni, D., Patillon, J.N., Erman, M., Ngo, T.
Published in Journal of crystal growth (01.09.1986)
Published in Journal of crystal growth (01.09.1986)
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Journal Article
High mobility of two-dimensional electrons in Ga1−xInxAs/InP heterostructures grown by atmospheric pressure MOVPE
Menu, E.P., Moroni, D., Patillon, J.N., Ngo, T., André, J.P.
Published in Journal of crystal growth (01.12.1986)
Published in Journal of crystal growth (01.12.1986)
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Journal Article
Uniformity — optical properties of GaInP-GaAlInP layers grown by MOVPE
Mpaskoutas, M., Morhaïm, C., Patillon, J.N., André, J.P., Valster, A., Rusch, J.J.
Published in Journal of crystal growth (1991)
Published in Journal of crystal growth (1991)
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Journal Article
Optical properties of MOCVD-grown AlInAs/InP type-II superlattices
Lugagne-Delpon, E., Voisin, P., André, J.P., Patillon, J.N., Voos, M.
Published in Surface science (1992)
Published in Surface science (1992)
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Journal Article
Conference Proceeding
Optical properties of AS-etched and regrown InP/InGaAs quantum wires and dots
Patillon, J.N., Jay, C., Iost, M., Gamonal, R., André, J.P., Soucail, B., Delalande, C., Voos, M.
Published in Superlattices and microstructures (1990)
Published in Superlattices and microstructures (1990)
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