Status of LWIR HgCdTe-on-Silicon FPA Technology
Carmody, M., Pasko, J.G., Edwall, D., Piquette, E., Kangas, M., Freeman, S., Arias, J., Jacobs, R., Mason, W., Stoltz, A., Chen, Y., Dhar, N.K.
Published in Journal of electronic materials (01.09.2008)
Published in Journal of electronic materials (01.09.2008)
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Conference Proceeding
Enhanced arsenic diffusion and activation in HgCdTe
SHIN, S. H, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, BUBULAC, L. O, DE WAMES, R. E
Published in Journal of electronic materials (01.05.1995)
Published in Journal of electronic materials (01.05.1995)
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Conference Proceeding
Journal Article
Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation
DeWames, R.E., Williams, G.M., Pasko, J.G., Vanderwyck, A.H.B.
Published in Journal of crystal growth (01.01.1988)
Published in Journal of crystal growth (01.01.1988)
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Journal Article
VI-7 backslide-illuminated InAs 1-x Sb x -InAs narrow band detectors
Andrews, A.M., Cheung, D.T., Gertner, E.R., Williams, G.M., Pasko, J.G., Clarke, J.E.
Published in IEEE transactions on electron devices (01.11.1976)
Published in IEEE transactions on electron devices (01.11.1976)
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Journal Article
VI-7 backslide-illuminated InAs1-xSbx-InAs narrow band detectors
Andrews, A.M., Cheung, D.T., Gertner, E.R., Williams, G.M., Pasko, J.G., Clarke, J.E.
Published in IEEE transactions on electron devices (01.11.1976)
Published in IEEE transactions on electron devices (01.11.1976)
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Journal Article