Limitations of Control of Electrophysical Characteristics of Quantum-Size Structures by Electrochemical Capacitance–Voltage Profiling
Goncharov, V. E., Nikonov, A. V., Batmanovskaya, N. S., Pashkeev, D. A., Kudryashov, A. V.
Published in Journal of communications technology & electronics (01.03.2020)
Published in Journal of communications technology & electronics (01.03.2020)
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One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains
Krivobok, V. S., Eroshenko, G. N., Muratov, A. V., Nikolaev, S. N., Klekovkin, A. V., Minaev, I. I., Savin, K. A., Pashkeev, D. A., Dubovaya, A. R., Aleshchenko, Yu. A., Chentsov, S. I.
Published in JETP letters (01.09.2024)
Published in JETP letters (01.09.2024)
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Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy
Krivobok, V. S., Pashkeev, D. A., Klekovkin, A. V., Minaev, I. I., Savin, K. A., Eroshenko, G. N., Goncharov, A. E., Nikolaev, S. N.
Published in Bulletin of the Lebedev Physics Institute (01.09.2023)
Published in Bulletin of the Lebedev Physics Institute (01.09.2023)
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The Influence of Interfacial Effects on the Electron Spectrum of GaAs/AlGaAs Structures Used for the Creation of Mid-IR Photodetectors
Krivobok, V. S., Pashkeev, D. A., Litvinov, D. A., Grigor’eva, L. N., Kolosov, S. A.
Published in Technical physics letters (01.03.2020)
Published in Technical physics letters (01.03.2020)
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Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors
Krivobok, V. S., Litvinov, D. A., Nikolaev, S. N., Onishchenko, E. E., Pashkeev, D. A., Chernopittsky, M. A., Grigor’eva, L. N.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2019)
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A Hybrid Mid-IR Photodetector Based on Semiconductor Quantum Wells
Krivobok, V. S., Kondorskiy, A. D., Pashkeev, D. A., Ekimov, E. A., Shabrin, A. D., Litvinov, D. A., Grigoreva, L. N., Kolosov, S. A., Chernopitssky, M. A., Klekovkin, A. V., Forsh, P. A.
Published in Technical physics letters (01.05.2021)
Published in Technical physics letters (01.05.2021)
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Study of Single-Electron Spectrum of GaAs/AlGaAs Heterostructure for Mid-IR Photodetectors via Low-Temperature Luminescence
Litvinov, D. A., Pashkeev, D. A., Grigoreva, L. N., Kolosov, S. A., Aminev, D. F.
Published in Bulletin of the Lebedev Physics Institute (01.04.2020)
Published in Bulletin of the Lebedev Physics Institute (01.04.2020)
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Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm
Pashkeev, D. A., Selivanov, Yu. G., Chizhevskii, E. G., Zasavitskiy, I. I.
Published in Semiconductors (Woodbury, N.Y.) (15.02.2016)
Published in Semiconductors (Woodbury, N.Y.) (15.02.2016)
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Dispersion of the refractive index of epitaxial Pb{sub 1-x}Eu{sub x}Te (0 {<=} x {<=} 1) alloy layers below the absorption edge
Pashkeev, D. A., Selivanov, Yu. G., Chizhevskii, E. G., Stavrovskii, D. B., Zasavitskiy, I. I.
Published in Semiconductors (Woodbury, N.Y.) (15.08.2011)
Published in Semiconductors (Woodbury, N.Y.) (15.08.2011)
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