Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges
Gupta, Chirag, Pasayat, Shubhra S.
Published in Physica status solidi. A, Applications and materials science (01.04.2022)
Published in Physica status solidi. A, Applications and materials science (01.04.2022)
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Journal Article
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Karnaty, Rohit R., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.
Published in IEEE electron device letters (01.05.2020)
Published in IEEE electron device letters (01.05.2020)
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Journal Article
Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
Pasayat, Shubhra S, Gupta, Chirag, Wang, Yifan, DenBaars, Steven P, Nakamura, Shuji, Keller, Stacia, Mishra, Umesh K
Published in Materials (04.01.2020)
Published in Materials (04.01.2020)
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Journal Article
First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD
Mukhopadhyay, Swarnav, Sanyal, Surjava, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra S.
Published in Crystals (Basel) (01.10.2023)
Published in Crystals (Basel) (01.10.2023)
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Journal Article
Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)
Mukhopadhyay, Swarnav, Liu, Cheng, Chen, Jiahao, Tahmidul Alam, Md, Sanyal, Surjava, Bai, Ruixin, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra S.
Published in Crystals (Basel) (01.10.2023)
Published in Crystals (Basel) (01.10.2023)
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Journal Article
MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity
Wang, Guangying, Li, Yuting, Kirch, Jeremy, Han, Yizhou, Chen, Jiahao, Marks, Samuel, Mukhopadhyay, Swarnav, Liu, Rui, Liu, Cheng, Evans, Paul G., Pasayat, Shubhra S.
Published in Crystals (Basel) (01.03.2023)
Published in Crystals (Basel) (01.03.2023)
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Journal Article
Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations
Gohel, Khush, Zhou, Linhui, Mukhopadhyay, Swarnav, Pasayat, Shubhra S, Gupta, Chirag
Published in Semiconductor science and technology (01.07.2024)
Published in Semiconductor science and technology (01.07.2024)
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Journal Article
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs
Li, Yuting, Wang, Guangying, Lin, Qinchen, Xie, Shuwen, Zhang, Wentao, Shih, Timothy, Vigen, Jonathan, Mukhopadhyay, Swarnav, Pasayat, Shubhra S, Gupta, Chirag
Published in Semiconductor science and technology (01.06.2024)
Published in Semiconductor science and technology (01.06.2024)
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Journal Article
0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode
Xie, Shuwen, Alam, Md. Tahmidul, Gong, Jiarui, Lin, Qinchen, Sheikhi, Moheb, Zhou, Jie, Alema, Fikadu, Osinsky, Andrei, Pasayat, Shubhra S., Ma, Zhenqiang, Gupta, Chirag
Published in IEEE electron device letters (01.03.2024)
Published in IEEE electron device letters (01.03.2024)
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Journal Article
376 nm High-Power UV-A Laser Diodes With GaN Waveguide
Lin, Qinchen, Liu, Cheng, Wang, Guangying, Sanyal, Surjava, Dwyer, Matthew, Seitz, Matthew, Chen, Jiahao, Li, Yuting, Earles, Tom, Tansu, Nelson, Zhang, Jing, Mawst, Luke, Gupta, Chirag, Pasayat, Shubhra S.
Published in IEEE photonics technology letters (15.12.2024)
Published in IEEE photonics technology letters (15.12.2024)
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Journal Article
Demonstration of Watt Level 375 nm Short Cavity Laser Diode with Etched Facets
Lin, Qinchen, Wang, Guangying, Liu, Cheng, Sanyal, Surjava, Mukhopadhyay, Swarnav, Dwyer, Matthew, Seitz, Matthew, Earles, Tom, Tansu, Nelson, Zhang, Jing, Mawst, Luke, Pasayat, Shubhra S., Gupta, Chirag
Published in IEEE photonics technology letters (01.06.2024)
Published in IEEE photonics technology letters (01.06.2024)
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Journal Article
Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN
Pasayat, Shubhra S, Gupta, Chirag, Acker-James, Dillon, Cohen, Daniel A, DenBaars, Steven P, Nakamura, Shuji, Keller, Stacia, Mishra, Umesh K
Published in Semiconductor science and technology (01.11.2019)
Published in Semiconductor science and technology (01.11.2019)
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Journal Article
Demonstration of Near‐Size‐Independent External Quantum Efficiency for 368 nm UV Micro‐LEDs
Wang, Guangying, Xie, Shuwen, Li, Yuting, Zhang, Wentao, Vigen, Jonathan, Shih, Timothy, Lin, Qinchen, Gong, Jiarui, Ma, Zhenqiang, Pasayat, Shubhra S, Gupta, Chirag
Published in Physica status solidi. PSS-RRL. Rapid research letters (01.11.2024)
Published in Physica status solidi. PSS-RRL. Rapid research letters (01.11.2024)
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Journal Article
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE
Pasayat, Shubhra S, Ahmadi, Elaheh, Romanczyk, Brian, Koksaldi, Onur, Agarwal, Anchal, Guidry, Matthew, Gupta, Chirag, Wurm, Christian, Keller, Stacia, Mishra, Umesh K
Published in Semiconductor science and technology (01.04.2019)
Published in Semiconductor science and technology (01.04.2019)
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Journal Article
Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm
Sanyal, Surjava, Lin, Qinchen, Shih, Timothy, Zhang, Shijie, Wang, Guangying, Mukhopadhyay, Swarnav, Vigen, Jonathan, Zhang, Wentao, Pasayat, Shubhra S., Gupta, Chirag
Published in Japanese Journal of Applied Physics (01.03.2024)
Published in Japanese Journal of Applied Physics (01.03.2024)
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Journal Article
First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel
Li, Weiyi, Pasayat, Shubhra S, Guidry, Matthew, Romanczyk, Brian, Zheng, Xun, Gupta, Chirag, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh K
Published in Semiconductor science and technology (01.07.2020)
Published in Semiconductor science and technology (01.07.2020)
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Journal Article
First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain
Gupta, Chirag, Tsukada, Yusuke, Romanczyk, Brian, Pasayat, Shubhra S, James, Dillon-Acker, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K
Published in Japanese Journal of Applied Physics (01.03.2019)
Published in Japanese Journal of Applied Physics (01.03.2019)
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Journal Article
Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Hatui, Nirupam, Krishna, Athith, Pasayat, Shubhra S., Keller, Stacia, Mishra, Umesh K.
Published in Electronics (Basel) (15.05.2021)
Published in Electronics (Basel) (15.05.2021)
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