Narrow-gap semiconductor magnetic-field sensors and applications
Heremans, J, Partin, D L, Thrush, C M, Green, L
Published in Semiconductor science and technology (01.01.1993)
Published in Semiconductor science and technology (01.01.1993)
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Journal Article
Growth of high mobility InSb by metalorganic chemical vapor deposition
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Conference Proceeding
Journal Article
Doping profiles for indium antimonide magnetoresistors
Partin, D.L., Heremans, J., Thrush, C.M.
Published in Sensors and actuators. A. Physical. (30.06.1998)
Published in Sensors and actuators. A. Physical. (30.06.1998)
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Journal Article
The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors
Partin, D.L., Pelczynski, M., Cooke, P., Green, L., Heremans, J., Thrush, C.M.
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Journal Article
Conference Proceeding
Galvanomagnetic properties of single-crystal bismuth-antimony thin films
Morelli, D T, Partin, D L, Heremans, J
Published in Semiconductor science and technology (01.03.1990)
Published in Semiconductor science and technology (01.03.1990)
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Journal Article
Conference Proceeding
Growth of tin-doped indium antimonide for magnetoresistors
Partin, D. L., Green, L., Heremans, J., Thrush, C. M.
Published in Journal of electronic materials (01.10.1997)
Published in Journal of electronic materials (01.10.1997)
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Journal Article
An investigation of the multicarrier transport properties of δ-doped InSb at high temperatures using a mobility spectrum technique
PANAEV, I. A, STUDENIKIN, S. A, TKACHENKO, V. A, TKACHENKO, O. A, HEREMANS, J. P, PARTIN, D. L, MORELLI, D. T, THRUSH, C. M
Published in Semiconductor science and technology (01.12.1996)
Published in Semiconductor science and technology (01.12.1996)
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Journal Article
Temperature stable Hall effect sensors
Partin, D.L., Heremans, J.P., Schroeder, T., Thrush, C.M., Flores-Mena, L.A.
Published in IEEE sensors journal (01.02.2006)
Published in IEEE sensors journal (01.02.2006)
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Journal Article
Indium antimonide doped with lead telluride grown by molecular beam epitaxy
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Journal Article
Conference Proceeding
Growth and characterization of indium arsenide thin films
PARTIN, D. L, GREEN, L, MORELLI, D. T, HEREMANS, J, FULLER, B. K, THRUSH, C. M
Published in Journal of electronic materials (01.12.1991)
Published in Journal of electronic materials (01.12.1991)
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Conference Proceeding
Journal Article
Strong nonlinear optical enhancement in MBE-grown Bi1-xSbx
YOUNGDALE, E. R, MEYER, J. R, HOFFMAN, C. A, BARTOLI, F. J, PARTIN, D. L, THRUSH, C. M, HEREMANS, J. P
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
Journal Article
Growth and characterization of epitaxial bismuth films
Partin, DL, Heremans, J, Morelli, DT, Thrush, CM, Olk, CH, Perry, TA
Published in Physical review. B, Condensed matter (15.08.1988)
Published in Physical review. B, Condensed matter (15.08.1988)
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Journal Article
Effects of contact metals on minority carrier diffusion lengths in GaAs
Partin, D. L., Milnes, A. G., Vassamillet, L. F.
Published in Journal of electronic materials (01.03.1978)
Published in Journal of electronic materials (01.03.1978)
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