HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays
REINE, M. B, MARCINIEC, J. W, WONG, K. K, PARODOS, T, MULLARKEY, J. D, LAMARRE, P. A, TOBIN, S. P, GUSTAVSEN, K. A, WILLIAMS, G. M
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Published in Journal of electronic materials (01.08.2007)
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Published in Journal of electronic materials (01.08.2009)
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Published in Journal of electronic materials (01.07.2010)
Published in Journal of electronic materials (01.07.2010)
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Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes
Reine, M.B., Marciniec, J.W., Wong, K.K., Parodos, T., Mullarkey, J.D., Lamarre, P.A., Tobin, S.P., Minich, R.W., Gustavsen, K.A., Compton, M., Williams, G.M.
Published in Journal of electronic materials (01.09.2008)
Published in Journal of electronic materials (01.09.2008)
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Effect of dislocations on VLWIR HgCdTe photodiodes
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Published in Journal of electronic materials (01.08.2007)
Published in Journal of electronic materials (01.08.2007)
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Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique
Lamarre, P., Fulk, C., D’Orsogna, D., Bellotti, E., Smith, F., LoVecchio, P., Reine, M. B., Parodos, T., Marciniec, J., Tobin, S. P., Markunas, J.
Published in Journal of electronic materials (01.08.2009)
Published in Journal of electronic materials (01.08.2009)
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Conference Proceeding
MOVPE growth of HgCdTe for high performance 3-5 mu m photodiodes operating at 100-180 K
Mitra, P, Case, F C, Reine, M B, Parodos, T, Tobin, S P, Norton, P W
Published in Journal of electronic materials (01.01.1999)
Published in Journal of electronic materials (01.01.1999)
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Published in Journal of electronic materials (01.08.1996)
Published in Journal of electronic materials (01.08.1996)
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Growth and Characterization of InTlSb for IR-Detectors
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Published in Journal of electronic materials (01.08.1996)
Published in Journal of electronic materials (01.08.1996)
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CdZnTe photodiode arrays for medical imaging
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Published in Journal of electronic materials (01.08.1996)
Published in Journal of electronic materials (01.08.1996)
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MOVPE growth of HgCdTe for high performance 3-5 mm photodiodes operating at 100-180K
Mitra, P, Case, F C, Reine, M B, Parodos, T
Published in Journal of electronic materials (01.06.1999)
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Published in Journal of electronic materials (01.06.1999)
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MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K
Mitra, P., Case, F. C., Reine, M. B., Parodos, T., Tobin, S. P., Norton, P. W.
Published in Journal of electronic materials (01.06.1999)
Published in Journal of electronic materials (01.06.1999)
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Journal Article
MOVPE GROWTH OF HgCdTe FOR HIGH PERFORMANCE 3-5 micrometer PHOTODIODES OPERATING AT 100-180 K
Mitra, P, Case, F C, Reine, M B, Parodos, T, Tobin, S P, Norton, P W
Published in Journal of electronic materials (01.01.1999)
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Published in Journal of electronic materials (01.01.1999)
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