Influence of Intercell Trapped Charge on Vertical NAND Flash Memory
Choi, Woo Young, Kwon, Hyug Su, Kim, Yong Jun, Lee, Byungin, Yoo, Hyunseung, Choi, Sangmoo, Cho, Gyu-Seog, Park, Sung-Kye
Published in IEEE electron device letters (01.02.2017)
Published in IEEE electron device letters (01.02.2017)
Get full text
Journal Article
Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation
Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Baek, Myung-Hyun, Park, Ji-Ho, Choi, Eunseok, Cho, Gyu Seong, Park, Sung-Kye, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
Get full text
Journal Article
Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory
Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Baek, Myung Hyun, Park, Ji-Ho, Choi, Eunseok, Cho, Gyu Seong, Park, Sung-Kye, Park, Byung-Gook
Published in IEEE electron device letters (01.12.2015)
Published in IEEE electron device letters (01.12.2015)
Get full text
Journal Article
Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory
Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Choi, Eunseok, Cho, Gyu Seog, Park, Sung-Kye, Lee, Jong-Ho, Park, Byung-Gook
Published in IEEE transactions on electron devices (01.09.2016)
Published in IEEE transactions on electron devices (01.09.2016)
Get full text
Journal Article
Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor
Kwon, Dae Woong, Seo, Joo Yun, Park, Se Hwan, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Cho, Gyu Seong, Park, Sung-Kye, Park, Byung-Gook
Published in IEEE electron device letters (01.11.2016)
Published in IEEE electron device letters (01.11.2016)
Get full text
Journal Article
Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String
JOE, Sung-Min, YI, Jeong-Hyong, PARK, Sung-Kye, SHIN, Hyungcheol, PARK, Byung-Gook, YOUNG JUNE PARK, LEE, Jong-Ho
Published in IEEE transactions on electron devices (01.01.2011)
Published in IEEE transactions on electron devices (01.01.2011)
Get full text
Journal Article
Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure
Kang, Ho-Jung, Choi, Nagyong, Joe, Sung-Min, Seo, Ji-Hyun, Choi, Eunseok, Park, Sung-Kye, Park, Byung-Gook, Lee, Jong-Ho
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Get full text
Conference Proceeding
Journal Article
Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer
LEE, Ga-Won, LEE, Hi-Duck, LIM, Kwan-Yong, YONG SOO KIM, YANG, Hong-Sun, CHO, Gyu-Seog, PARK, Sung-Kye, HONG, Sung-Joo
Published in IEEE electron device letters (01.02.2009)
Published in IEEE electron device letters (01.02.2009)
Get full text
Journal Article
Universal surface reaction model of plasma oxide etching
You, Hae Sung, Yook, Yeong Geun, Chang, Won Seok, Park, Jae Hyeong, Oh, Min Ju, Kwon, Deuk Chul, Yoon, Jung Sik, Yu, Dong Hun, Kwon, Hyoung Chul, Park, Sung-Kye, Im, Yeon Ho
Published in Journal of physics. D, Applied physics (16.09.2020)
Published in Journal of physics. D, Applied physics (16.09.2020)
Get full text
Journal Article
Reliability issue of 20 nm MLC NAND Flash
Tae-Un Youn, Keum-Whan Noh, Sang-Mok Yi, Jong-Wook Kim, Noh-Yong Park, Sung-Chul Shin, Kwang-Hyun Yun, Byung-Kook Kim, Sung-Kye Park, Seok-Kiu Lee, Sung-Joo Hong
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Get full text
Conference Proceeding