Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory
Yin, Huaxiang, Hyun, Jaewoong, Park, Youngsoo, Kim, Sunil, Lim, Hyuck, Min, Yosep, Kim, Chang Jung, Song, Ihun, Park, Jaechul, Kim, Sang-Wook, Tikhonovsky, Alexander
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance-Voltage Characteristics
LEE, Sangwon, PARK, Sungwook, DONG MYONG KIM, DAE HWAN KIM, KIM, Sungchul, JEON, Yongwoo, JEON, Kichan, PARK, Jun-Hyun, PARK, Jaechul, SONG, Ihun, CHANG JUNG KIM, PARK, Youngsoo
Published in IEEE electron device letters (01.03.2010)
Published in IEEE electron device letters (01.03.2010)
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Journal Article
Source/Drain Series-Resistance Effects in Amorphous Gallium-Indium Zinc-Oxide Thin Film Transistors
PARK, Jaechul, KIM, Changjung, LEE, Jaecheol, KWON, Kee-Won, PARK, Youngsoo, KIM, Sunil, SONG, Ihun, KIM, Sangwook, DONGHUN KANG, LIM, Hyuck, HUAXIANG YIN, JUNG, Ranju, LEE, Eunha
Published in IEEE electron device letters (01.08.2008)
Published in IEEE electron device letters (01.08.2008)
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Journal Article
Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)
YONG WOO JEON, KIM, Sungchul, LEE, Je-Hun, BYUNG DU AHN, SEI YONG PARK, PARK, Jun-Hyun, JOO HAN KIM, LEE, Sangwon, DONG MYONG KIM, DAE HWAN KIM, PARK, Jaechul, CHANG JUNG KIM, SONG, Ihun, PARK, Youngsoo, CHUNG, U-In
Published in IEEE transactions on electron devices (01.11.2010)
Published in IEEE transactions on electron devices (01.11.2010)
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Journal Article
Short Channel Characteristics of Gallium-Indium-Zinc-Oxide Thin Film Transistors for Three-Dimensional Stacking Memory
SONG, Ihun, KIM, Sunil, HUAXIANG YIN, CHANG JUNG KIM, PARK, Jaechul, KIM, Sangwook, HYUK SOON CHOI, LEE, Eunha, PARK, Youngsoo
Published in IEEE electron device letters (01.06.2008)
Published in IEEE electron device letters (01.06.2008)
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Journal Article
Three-Dimensional Integration Approach to High-Density Memory Devices
KIM, Hojung, JEON, Sanghun, CHUNG, U-In, LEE, Myoung-Jae, PARK, Jaechul, KANG, Sangbeom, CHOI, Hyun-Sik, PARK, Churoo, HWANG, Hong-Sun, KIM, Changjung, SHIN, Jaikwang
Published in IEEE transactions on electron devices (01.11.2011)
Published in IEEE transactions on electron devices (01.11.2011)
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Journal Article
Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance-Voltage Characteristics
Park, Jun-Hyun, Jeon, Kichan, Lee, Sangwon, Kim, Sunil, Kim, Sangwook, Song, Ihun, Kim, Chang Jung, Park, Jaechul, Park, Youngsoo, Kim, Dong Myong, Kim, Dae Hwan
Published in IEEE electron device letters (01.12.2008)
Published in IEEE electron device letters (01.12.2008)
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Journal Article
Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors
Park, Jun-Hyun, Jeon, Kichan, Lee, Sangwon, Kim, Sangwook, Kim, Sunil, Song, Ihun, Park, Jaechul, Park, Youngsoo, Kim, Chang Jung, Kim, Dong Myong, Kim, Dae Hwan
Published in Journal of the Electrochemical Society (2010)
Published in Journal of the Electrochemical Society (2010)
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Journal Article
Density of States-Based DC I- V Model of Amorphous Gallium-Indium-Zinc-Oxide Thin-Film Transistors
PARK, Jun-Hyun, LEE, Sangwon, DAE HWAN KIM, JEON, Kichan, KIM, Sunil, KIM, Sangwook, PARK, Jaechul, SONG, Ihun, CHANG JUNG KIM, PARK, Youngsoo, DONG MYONG KIM
Published in IEEE electron device letters (01.10.2009)
Published in IEEE electron device letters (01.10.2009)
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Journal Article
Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by hbox NH 3 Plasma Treatment
Sangwook Kim, Sangwook Kim, Jaechul Park, Jaechul Park, Changjung Kim, Changjung Kim, Ihun Song, Ihun Song, Sunil Kim, Sunil Kim, Sungho Park, Sungho Park, Huaxiang Yin, Huaxiang Yin, Hyung-Ik Lee, Hyung-Ik Lee, Eunha Lee, Eunha Lee, Youngsoo Park, Youngsoo Park
Published in IEEE electron device letters (01.01.2009)
Published in IEEE electron device letters (01.01.2009)
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Journal Article
Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications
Jeon, Sanghun, Park, Sungho, Song, Ihun, Hur, Ji-Hyun, Park, Jaechul, Kim, Hojung, Kim, Sunil, Kim, Sangwook, Yin, Huaxiang, Chung, U−In, Lee, Eunha, Kim, Changjung
Published in ACS applied materials & interfaces (26.01.2011)
Published in ACS applied materials & interfaces (26.01.2011)
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Journal Article
Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by NH3 Plasma Treatment
KIM, Sangwook, PARK, Jaechul, KIM, Changjung, SONG, Ihun, KIM, Sunil, PARK, Sungho, HUAXIANG YIN, LEE, Hyung-Ik, LEE, Eunha, PARK, Youngsoo
Published in IEEE electron device letters (01.04.2009)
Published in IEEE electron device letters (01.04.2009)
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Journal Article
Samsung Physically Unclonable Function (SAMPUF™) and its integration with Samsung Security System
Lee, Yongki, Karpinskyy, Bohdan, Choi, Yunhyeok, Ahn, Kyoung-Moon, Kim, Yongsoo, Park, Jieun, Noh, Sumin, Kang, Jisu, Shin, Jonghoon, Park, Jaechul, Chung, Youngjin, Shin, Jongshin
Published in 2021 IEEE Custom Integrated Circuits Conference (CICC) (01.04.2021)
Published in 2021 IEEE Custom Integrated Circuits Conference (CICC) (01.04.2021)
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Conference Proceeding
180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications
Sanghun Jeon, Sungho Park, Ihun Song, Ji-Hyun Hur, Jaechul Park, Sunil Kim, Sangwook Kim, Huaxiang Yin, Eunha Lee, Seungeon Ahn, Hojung Kim, Changjung Kim, U-In Chung
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors
Kim, Sangwook, Kim, Sunil, Kim, Changjung, Park, JaeChul, Song, Ihun, Jeon, Sanghun, Ahn, Seung-Eon, Park, Jin-Seong, Jeong, Jae Kyeong
Published in Solid-state electronics (01.08.2011)
Published in Solid-state electronics (01.08.2011)
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Journal Article