First AlGaN/GaN MOSFET with photoanodic gate dielectric
Mistele, D, Rotter, T, Röver, K.S, Paprotta, S, Seyboth, M, Schwegler, V, Fedler, F, Klausing, H, Semchinova, O.K, Stemmer, J, Aderhold, J, Graul, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.05.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.05.2002)
Get full text
Journal Article
First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide
Rotter, T., Mistele, D., Stemmer, J., Seyboth, M., Schwegler, V., Paprotta, S., Fedler, F., Klausing, H., Semchinova, O.K., Aderhold, J., Graul, J.
Published in Electronics letters (24.05.2001)
Published in Electronics letters (24.05.2001)
Get full text
Journal Article
First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide
Rotter, T, Mistele, D, Stemmer, J, Seyboth, M, Schwegler, V, Paprotta, S, Fedler, F, Klausing, H, Semchinova, O K, Aderhold, J, Graul, J
Published in Electronics letters (24.05.2001)
Get full text
Published in Electronics letters (24.05.2001)
Journal Article
Highly Reliable Flash Memory with Self-Aligned Split-Gate Cell Embedded into High Performance 65nm CMOS for Automotive & Smartcard Applications
Shum, D., Power, J. R., Ullmann, R., Suryaputra, E., Ho, K., Hsiao, J., Tan, C. H., Langheinrich, W., Bukethal, C., Pissors, V., Tempel, G., Rohrich, M., Gratz, A., Iserhagen, A., Andersen, E. O., Paprotta, S., Dickenscheid, W., Strenz, R., Duschl, R., Kern, T., Hsieh, C. T., Huang, C. M., Ho, C. W., Kuo, H. H., Hung, C. W., Lin, Y. T., Tran, L. C.
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
Get full text
Conference Proceeding