Size and nitrogen inhomogeneity in detonation and laser synthesized primary nanodiamond particles revealed via salt-assisted deaggregation
Stehlik, Stepan, Henych, Jiri, Stenclova, Pavla, Kral, Robert, Zemenova, Petra, Pangrac, Jiri, Vanek, Ondrej, Kromka, Alexander, Rezek, Bohuslav
Published in Carbon (New York) (01.01.2021)
Published in Carbon (New York) (01.01.2021)
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Journal Article
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
Hospodková, Alice, Pangrác, Jiří, Vyskočil, Jan, Zíková, Markéta, Oswald, Jiří, Komninou, Philomela, Hulicius, Eduard
Published in Journal of crystal growth (15.03.2015)
Published in Journal of crystal growth (15.03.2015)
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Journal Article
Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum
Morávek, Pavel, Pangrác, Jiří, Fulem, Michal, Hulicius, Eduard, Růžička, Květoslav
Published in Journal of chemical and engineering data (11.12.2014)
Published in Journal of chemical and engineering data (11.12.2014)
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Journal Article
Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony
Morávek, Pavel, Fulem, Michal, Pangrác, Jiří, Hulicius, Eduard, Růžička, Květoslav
Published in Fluid phase equilibria (25.12.2013)
Published in Fluid phase equilibria (25.12.2013)
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Journal Article
Epitaxial growth on porous GaAs substrates
Grym, Jan, Nohavica, Dušan, Gladkov, Petar, Hulicius, Eduard, Pangrác, Jiří, Piksová, Kateřina
Published in Comptes rendus. Chimie (01.01.2013)
Published in Comptes rendus. Chimie (01.01.2013)
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Journal Article
Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
Moiseev, Konstantin, Ivanov, Eduard, Romanov, Vyacheslav, Mikhailova, Maya, Yakovlev, Yury, Hulicius, Eduard, Hospodková, Alica, Pangrác, Jiri, Šimeček, Tomislav
Published in Physics procedia (31.01.2010)
Published in Physics procedia (31.01.2010)
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Journal Article
Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds
Stehlik, Stepan, Varga, Marian, Stenclova, Pavla, Ondic, Lukas, Ledinsky, Martin, Pangrac, Jiri, Vanek, Ondrej, Lipov, Jan, Kromka, Alexander, Rezek, Bohuslav
Published in ACS applied materials & interfaces (08.11.2017)
Published in ACS applied materials & interfaces (08.11.2017)
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Journal Article
Optical characterization of MOVPE grown δ-InAs layers in GaAs
Hazdra, Pavel, Voves, Jan, Hulicius, Eduard, Pangrác, Jiří
Published in Physica status solidi. C (01.01.2005)
Published in Physica status solidi. C (01.01.2005)
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Journal Article
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
Hájek, František, Hospodková, Alice, Hubík, Pavel, Gedeonová, Zuzana, Hubáček, Tomáš, Pangrác, Jiří, Kuldová, Karla
Published in Semiconductor science and technology (01.07.2021)
Published in Semiconductor science and technology (01.07.2021)
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Journal Article
Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V‑Pit Formation on the AlGaN/GaN Interface
Hospodková, Alice, Hájek, František, Hubáček, Tomáš, Gedeonová, Zuzana, Hubík, Pavel, Hývl, Matěj, Pangrác, Jiří, Dominec, Filip, Košutová, Tereza
Published in ACS applied materials & interfaces (19.04.2023)
Published in ACS applied materials & interfaces (19.04.2023)
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Journal Article
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
Hospodková, Alice, Čížek, Jakub, Hájek, František, Hubáček, Tomáš, Pangrác, Jiří, Dominec, Filip, Kuldová, Karla, Batysta, Jan, Liedke, Maciej O., Hirschmann, Eric, Butterling, Maik, Wagner, Andreas
Published in Materials (01.10.2022)
Published in Materials (01.10.2022)
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Journal Article
Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
Vaněk, Tomáš, Hájek, František, Dominec, Filip, Hubáček, Tomáš, Kuldová, Karla, Pangrác, Jiří, Košutová, Tereza, Kejzlar, Pavel, Bábor, Petr, Lachowski, Artur, Hospodková, Alice
Published in Journal of crystal growth (01.07.2021)
Published in Journal of crystal growth (01.07.2021)
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Journal Article
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
Dominec, Filip, Hospodková, Alice, Hubáček, Tomáš, Zíková, Markéta, Pangrác, Jiří, Kuldová, Karla, Vetushka, Aliaksei, Hulicius, Eduard
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
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Journal Article
Vapor Pressure of Selected Organic Iodides
Fulem, Michal, Růžička, Květoslav, Morávek, Pavel, Pangrác, Jiří, Hulicius, Eduard, Kozyrkin, Boris, Shatunov, Valery
Published in Journal of chemical and engineering data (11.11.2010)
Published in Journal of chemical and engineering data (11.11.2010)
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Journal Article
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
Vyskočil, Jan, Hospodková, Alice, Petříček, Otto, Pangrác, Jiří, Zíková, Markéta, Oswald, Jiří, Vetushka, Aliaksei
Published in Journal of crystal growth (15.04.2017)
Published in Journal of crystal growth (15.04.2017)
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Journal Article
Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
Hubáček, Tomáš, Hospodková, Alice, Kuldová, Karla, Oswald, Jiří, Pangrác, Jiří, Jarý, Vitězslav, Dominec, Filip, Slavická Zíková, Markéta, Hájek, František, Hulicius, Eduard, Vetushka, Alexej, Ledoux, Gilles, Dujardin, Christophe, Nikl, Martin
Published in CrystEngComm (2019)
Published in CrystEngComm (2019)
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Journal Article
Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn
Hájek, František, Jarý, Vítězslav, Hubáček, Tomáš, Dominec, Filip, Hospodková, Alice, Kuldová, Karla, Oswald, Jiří, Pangrác, Jiří, Vaněk, Tomáš, Buryi, Maksym, Ledoux, Gilles, Dujardin, Christophe
Published in ECS journal of solid state science and technology (01.06.2023)
Published in ECS journal of solid state science and technology (01.06.2023)
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Journal Article
InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties
Hospodková, Alice, Hubáček, Tomáš, Oswald, Jiří, Pangrác, Jiří, Kuldová, Karla, Hývl, Matěj, Dominec, Filip, Ledoux, Gilles, Dujardin, Christophe
Published in physica status solidi (b) (01.05.2018)
Published in physica status solidi (b) (01.05.2018)
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Journal Article
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
Hospodková, Alice, Pangrác, Jiří, Zíková, Markéta, Oswald, Jiří, Vyskočil, Jan, Komninou, Philomela, Kioseoglou, Joseph, Florini, Nikoleta, Hulicius, Eduard
Published in Applied surface science (15.05.2014)
Published in Applied surface science (15.05.2014)
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