Thickness-Dependent Study of High- Performance WS2-FETs With Ultrascaled Channel Lengths
Pang, Chin-Sheng, Wu, Peng, Appenzeller, Joerg, Chen, Zhihong
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
Get full text
Journal Article
WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
Pang, Chin‐Sheng, Chen, Chin‐Yi, Ameen, Tarek, Zhang, Shengjiao, Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Chen, Zhihong
Published in Small (Weinheim an der Bergstrasse, Germany) (01.10.2019)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.10.2019)
Get full text
Journal Article
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices
Chiang, Chin-Cheng, Lan, Hao-Yu, Pang, Chin-Sheng, Appenzeller, Joerg, Chen, Zhihong
Published in IEEE electron device letters (01.02.2022)
Published in IEEE electron device letters (01.02.2022)
Get full text
Journal Article
Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation
Pang, Chin‐Sheng, Zhou, Ruiping, Liu, Xiangkai, Wu, Peng, Hung, Terry Y. T., Guo, Shiqi, Zaghloul, Mona E., Krylyuk, Sergiy, Davydov, Albert V., Appenzeller, Joerg, Chen, Zhihong
Published in Small (Weinheim an der Bergstrasse, Germany) (01.07.2021)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.07.2021)
Get full text
Journal Article
Gate tunable 2D WSe2 Esaki diode by SiNx doping
Chin-Sheng Pang, Ilatikhameneh, Hesameddin, Zhihong Chen
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
Get full text
Conference Proceeding
Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
Sun, Zheng, Pang, Chin-Sheng, Wu, Peng, Hung, Terry Y.T., Li, Ming-Yang, Liew, San Lin, Cheng, Chao-Ching, Wang, Han, Wong, H.-S. Philip, Li, Lain-Jong, Radu, Iuliana, Chen, Zhihong, Appenzeller, Joerg
Published in ACS nano (27.09.2022)
Published in ACS nano (27.09.2022)
Get full text
Journal Article
Atomically Controlled Tunable Doping in High‐Performance WSe2 Devices
Pang, Chin‐Sheng, Hung, Terry Y. T., Khosravi, Ava, Addou, Rafik, Wang, Qingxiao, Kim, Moon J., Wallace, Robert M., Chen, Zhihong
Published in Advanced electronic materials (01.08.2020)
Published in Advanced electronic materials (01.08.2020)
Get full text
Journal Article
WSe 2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
Pang, Chin-Sheng, Chen, Chin-Yi, Ameen, Tarek, Zhang, Shengjiao, Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Chen, Zhihong
Published in Small (Weinheim an der Bergstrasse, Germany) (01.10.2019)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.10.2019)
Get full text
Journal Article
First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping
Pang, Chin-Sheng, Chen, Zhihong
Published in 2018 76th Device Research Conference (DRC) (01.06.2018)
Published in 2018 76th Device Research Conference (DRC) (01.06.2018)
Get full text
Conference Proceeding
First Demonstration of WSe2 Based CMOS-SRAM
Pang, Chin-Sheng, Thakuria, Niharika, Gupta, Sumeet Kumar, Chen, Zhihong
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Get full text
Conference Proceeding
Origin of Band Modulation in GeTe-Rich Ge–Sb–Te Thin Film
Wong, Deniz P, Aminzare, Masoud, Chou, Ta-Lei, Pang, Chin-Sheng, Liu, Yi-Ren, Shen, Tzu-Hsien, Chang, Benjamin K, Lien, Hsiang-Ting, Chang, Sun-Tang, Chien, Chia-Hua, Chen, Yang-Yuan, Chu, Ming-Wen, Yang, Yaw-Wen, Hsieh, Wen-Pin, Rogl, Gerda, Rogl, Peter, Kakefuda, Yohei, Mori, Takao, Chou, Mei-Yin, Chen, Li-Chyong, Chen, Kuei-Hsien
Published in ACS applied electronic materials (24.12.2019)
Published in ACS applied electronic materials (24.12.2019)
Get full text
Journal Article
Thickness-Dependent Study of High- Performance WS 2 -FETs With Ultrascaled Channel Lengths
Pang, Chin-Sheng, Wu, Peng, Appenzeller, Joerg, Chen, Zhihong
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
Get full text
Journal Article
How to Report and Benchmark Emerging Field-Effect Transistors
Cheng, Zhihui, Chin-Sheng, Pang, Wang, Peiqi, Le, Son T, Wu, Yanqing, Shahrjerdi, Davood, Radu, Iuliana, Lemme, Max C, Lian-Mao, Peng, Duan, Xiangfeng, Chen, Zhihong, Appenzeller, Joerg, Koester, Steven J, Pop, Eric, Franklin, Aaron D, Richter, Curt A
Published in arXiv.org (04.08.2022)
Published in arXiv.org (04.08.2022)
Get full text
Paper
Journal Article
Air-Stable P-Doping in Record High-Performance Monolayer WSe 2 Devices
Chiang, Chin-Cheng, Lan, Hao-Yu, Pang, Chin-Sheng, Appenzeller, Joerg, Chen, Zhihong
Published in IEEE electron device letters (01.02.2022)
Published in IEEE electron device letters (01.02.2022)
Get full text
Journal Article
Atomically Controlled Tunable Doping in High Performance WSe2 Devices
Chin-Sheng, Pang, Hung, Terry Y T, Khosravi, Ava, Addou, Rafik, Wang, Qingxiao, Kim, Moon J, Wallace, Robert M, Chen, Zhihong
Published in arXiv.org (18.10.2019)
Published in arXiv.org (18.10.2019)
Get full text
Paper
Journal Article