A review of selected topics in physics based modeling for tunnel field-effect transistors
Esseni, David, Pala, Marco, Palestri, Pierpaolo, Alper, Cem, Rollo, Tommaso
Published in Semiconductor science and technology (01.08.2017)
Published in Semiconductor science and technology (01.08.2017)
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Journal Article
Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials
M'foukh, Adel, Pala, Marco G., Esseni, David
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
Grillet, Corentin, Cresti, Alessandro, Pala, Marco G.
Published in IEEE transactions on electron devices (01.07.2018)
Published in IEEE transactions on electron devices (01.07.2018)
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Journal Article
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
Logoteta, Demetrio, Pala, Marco G., Choukroun, Jean, Dollfus, Philippe, Iannaccone, Giuseppe
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
Esseni, David, Pala, Marco G., Rollo, Tommaso
Published in IEEE transactions on electron devices (01.09.2015)
Published in IEEE transactions on electron devices (01.09.2015)
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Journal Article
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
Cao, Jiang, Logoteta, Demetrio, Pala, Marco G, Cresti, Alessandro
Published in Journal of physics. D, Applied physics (07.02.2018)
Published in Journal of physics. D, Applied physics (07.02.2018)
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Journal Article
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter
Shao, Yanjie, Pala, Marco, Esseni, David, del Alamo, Jesus A.
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
Lizzit, Daniel, Khakbaz, Pedram, Driussi, Francesco, Pala, Marco, Esseni, David
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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Journal Article
A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
Logoteta, Demetrio, Pala, Marco G., Choukroun, Jean, Dollfus, Philippe, Iannaccone, Giuseppe
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines
Helleboid, Rémi, Rideau, Denis, Grebot, Jeremy, Nicholson, Isobel, Moussy, Norbert, Saxod, Olivier, Saint-Martin, Jérôme, Pala, Marco, Dollfus, Philippe
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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Journal Article
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination
Pilotto, Alessandro, M'Foukh, Adel, Dollfus, Philippe, Saint-Martin, Jeriome, Pala, Marco G.
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
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Conference Proceeding
Dipper and Non-Dipper Blood Pressure 24-Hour Patterns: Circadian Rhythm-Dependent Physiologic and Pathophysiologic Mechanisms
Fabbian, Fabio, Smolensky, Michael H., Tiseo, Ruana, Pala, Marco, Manfredini, Roberto, Portaluppi, Francesco
Published in Chronobiology international (01.03.2013)
Published in Chronobiology international (01.03.2013)
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Journal Article
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
Logoteta, Demetrio, Cavassilas, Nicolas, Cresti, Alessandro, Pala, Marco G., Bescond, Marc
Published in IEEE transactions on electron devices (01.02.2018)
Published in IEEE transactions on electron devices (01.02.2018)
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Journal Article
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading
Brocard, Sylvan, Pala, Marco G., Esseni, David
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
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Journal Article