Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium
Sun, B, Yang, Q, Newman, R C, Pajot, B, Tolk, N H, Feldman, L C, Lüpke, G
Published in Physical review letters (07.05.2004)
Published in Physical review letters (07.05.2004)
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Journal Article
Growth of anthracene thin films by matrix-assisted pulsed-laser evaporation
GUTIERREZ-LLORENTE, A, PEREZ-CASERO, R, PAJOT, B, ROUSSEL, J, DEFOURNEAU, R. M, DEFOURNEAU, D, FAVE, J. L, MILLON, E, PERRIERE, J
Published in Applied physics. A, Materials science & processing (01.11.2003)
Published in Applied physics. A, Materials science & processing (01.11.2003)
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Journal Article
Interstitial O isotope effects in silicon
Pajot, B, Artacho, E, Ammerlaan, C A J, Spaeth, J -M
Published in Journal of physics. Condensed matter (28.08.1995)
Published in Journal of physics. Condensed matter (28.08.1995)
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Journal Article
Hydrogen diffusion and acceptor passivation in p-type GaAs
RAHBI, R, PAJOT, B, CHEVALLIER, J, MARBEUF, A, LOGAN, R. C, GAVAND, M
Published in Journal of applied physics (15.02.1993)
Published in Journal of applied physics (15.02.1993)
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Journal Article
Vacancy- and acceptor-H complexes in InP
Ewels, C P, Öberg, S, Jones, R, Pajot, B, Briddon, P R
Published in Semiconductor science and technology (01.04.1996)
Published in Semiconductor science and technology (01.04.1996)
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Journal Article
Comparison of electronic structure and properties of hydrogen-associated and thermal double donors in silicon
TOKMOLDIN, S. Z, MUKASHEV, B. N, ABDULLIN, K. A, GORELKINSKII, Yu. V, PAJOT, B
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2000)
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Conference Proceeding
Journal Article
Thermal nitridation of p-type porous silicon in ammonia
Morazzani, V, Cantin, J.L, Ortega, C, Pajot, B, Rahbi, R, Rosenbauer, M, von Bardeleben, H.J, Vazsonyi, E
Published in Thin solid films (15.04.1996)
Published in Thin solid films (15.04.1996)
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Journal Article
Conference Proceeding
Isotopic shifts of the low-energy excitations of interstitial oxygen in germanium
Laßmann, K, Linsenmaier, C, Maier, F, Zeller, F, Haller, E.E, Itoh, K.M, Khirunenko, L.I, Pajot, B, Müssig, H
Published in Physica. B, Condensed matter (01.03.1999)
Published in Physica. B, Condensed matter (01.03.1999)
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Journal Article
Interlaboratory determination of oxygen in silicon for certified reference materials
MURRAY, R, GRAFF, K, PAJOT, B, STRIJCKMANS, K, VANDENDRIESSCHE, S, GRIEPINK, B, MARCHANDISE, H
Published in Journal of the Electrochemical Society (01.12.1992)
Published in Journal of the Electrochemical Society (01.12.1992)
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Journal Article
Quantitative spectroscopy of interstitial oxygen in silicon
PAJOT, B, STEIN, H. J, CALES, B, NAUD, C
Published in Journal of the Electrochemical Society (01.12.1985)
Published in Journal of the Electrochemical Society (01.12.1985)
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Journal Article
Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
Pajot, B, Chevallier, J, Jalil, A, Rose, B
Published in Semiconductor science and technology (01.02.1989)
Published in Semiconductor science and technology (01.02.1989)
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Journal Article
Experimental study of the hydrogen complexes in indium phosphide
Darwich, R, Pajot, B, Rose, B, Robein, D, Theys, B, Rahbi, R, Porte, C, Gendron, F
Published in Physical review. B, Condensed matter (15.12.1993)
Published in Physical review. B, Condensed matter (15.12.1993)
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Journal Article
Spectroscopic evidence for the hydrogen passivation of zinc acceptors in gallium arsenide
Pajot, B, Jalil, A, Chevallier, J, Azoulay, R
Published in Semiconductor science and technology (01.05.1987)
Published in Semiconductor science and technology (01.05.1987)
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Journal Article
Experimental evidence for boron-hydrogen interaction in boron-doped silicon passivated with hydrogen
Pajot, B., Chari, A., Aucouturier, M., Astier, M., Chantre, A.
Published in Solid state communications (01.09.1988)
Published in Solid state communications (01.09.1988)
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Journal Article
Spectroscopic investigation of hydrogen-dopant complexes in bulk p-type and implanted n-type crystalline silicon
RIZK, R, DE MIERRY, P, SONG, C, BALLUTAUD, D, PAJOT, B
Published in Journal of applied physics (01.10.1991)
Published in Journal of applied physics (01.10.1991)
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Journal Article