Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al
Taube, Andrzej, Kamińska, Eliana, Kozubal, Maciej, Kaczmarski, Jakub, Wojtasiak, Wojciech, Jasiński, Jakub, Borysiewicz, Michał A., Ekielski, Marek, Juchniewicz, Marcin, Grochowski, Jakub, Myśliwiec, Marcin, Dynowska, Elżbieta, Barcz, Adam, Prystawko, Paweł, Zając, Marcin, Kucharski, Robert, Piotrowska, Anna
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer
PERLIN PIOTR, PIOTRZKOWSKI RYSZARD, GRZEGORY IZABELLA, SUSKI TADEUSZ, KRY KO MARCIN, POROWSKI SYLWESTER, LESZCZY SKI MICHA, PRYSTAWKO PAWE, UCZNIK BOLES AW, CZERNECKI ROBERT, LITWIN-STASZEWSKA EL BIETA, GRZANKA SZYMON, DMOWSKI LES AW
Year of Publication 09.11.2009
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Year of Publication 09.11.2009
Patent