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"PRUEFER EKKEHARD"
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"PRUEFER EKKEHARD"
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A semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same
by
EKKEHARD PRUEFER
,
WOLFGANG BUCHHOLTZ
Year of Publication
11.07.2007
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Drain/source extension structure of a field effect transistor with reduced boron diffusion
by
KRUEGEL STEPHAN
,
PRUEFER EKKEHARD
,
HEMPEL KLAUS
,
VAN BENTUM RALF
Year of Publication
15.04.2014
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Verfahren zur Herstellung eines Halbleiterbauelements mit Isolationsgraben mit reduzierter Seitenwandverspannung
by
HEMPEL, KLAUS
,
PRUEFER
,
EKKEHARD
,
KRUEGEL, STEPHAN
Year of Publication
16.09.2010
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Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement mit Halbleitergebieten, die unterschiedlich verformte Kanalgebiete aufweisen
by
BUCHHOLTZ, WOLFGANG
,
PRUEFER
,
EKKEHARD
,
HORSTMANN, MANFRED
Year of Publication
05.08.2010
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Verfahren zum Reduzieren von Siliziddefekten durch Entfernen von Kontaminationsstoffen vor der Drain/Source-Aktivierung
by
Bentum, Ralf van
,
Pruefer
,
Ekkehard
,
Lenski, Markus
Year of Publication
01.09.2016
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Method for reducing silicide defects by removing contaminants prior to drain/source activation
by
Lenski, Markus
,
Van Bentum, Ralf
,
Pruefer
,
Ekkehard
Year of Publication
05.05.2009
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Method for reducing silicide defects by removing contaminants prior to drain/source activation
by
PRUEFER EKKEHARD
,
LENSKI MARKUS
,
VAN BENTUM RALF
Year of Publication
05.05.2009
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Verfahren zur Herstellung einer Drain/Source-Erweiterungsstruktur eines Feldeffekttransistors mit reduzierter Bordiffusion und Transistor
by
HEMPEL, KLAUS
,
PRUEFER
,
EKKEHARD
,
KRUEGEL, STEPHAN
,
BENTUM, RALF VAN
Year of Publication
20.01.2011
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Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same
by
Hempel, Klaus
,
Kruegel, Stephan
,
Pruefer
,
Ekkehard
Year of Publication
15.04.2008
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Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same
by
KRUEGEL STEPHAN
,
PRUEFER EKKEHARD
,
HEMPEL KLAUS
Year of Publication
15.04.2008
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METHOD FOR REDUCING SILICIDE DEFECTS BY REMOVING CONTAMINANTS PRIOR TO DRAIN/SOURCE ACTIVATION
by
PRUEFER EKKEHARD
,
LENSKI MARKUS
,
VAN BENTUM RALF
Year of Publication
01.11.2007
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Semiconductor component e.g. field-effect transistor, producing method, involves forming endowed region in semiconductor region, covering semiconductor region by dielectric layer, and forming victim coating on semiconductor region
by
LENSKI, MARKUS
,
PRUEFER
,
EKKEHARD
,
BENTUM, RALF VAN
Year of Publication
31.10.2007
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Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same
by
HORSTMANN MANFRED,
PRUEFER EKKEHARD
,BUCHHOLTZ WOLFGANG
Year of Publication
26.09.2007
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TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH REDUCED SIDEWALL STRESS AND A METHOD OF MANUFACTURING THE SAME
by
KRUEGEL STEPHAN
,
PRUEFER EKKEHARD
,
HEMPEL KLAUS
Year of Publication
05.07.2007
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A SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR REGIONS HAVING DIFFERENTLY STRAINED CHANNEL REGIONS AND A METHOD OF MANUFACTURING THE SAME
by
BUCHHOLTZ WOLFGANG
,
PRUEFER EKKEHARD
,
HORSTMANN MANFRED
Year of Publication
02.07.2007
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A SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR REGIONS HAVING DIFFERENTLY STRAINED CHANNEL REGIONS AND A METHOD OF MANUFACTURING THE SAME
by
BUCHHOLTZ, WOLFGANG
,
PRUEFER
,
EKKEHARD
,
HORSTMANN, MANFRED
Year of Publication
11.05.2006
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Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same
by
BUCHHOLTZ WOLFGANG
,
PRUEFER EKKEHARD
,
HORSTMANN MANFRED
Year of Publication
04.05.2006
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Method for production of integrated circuits, involves building dielectric coating over substrate, which has gate electrode formed over active area and is separated by gate isolation layer
by
HEMPEL, KLAUS
,
PRUEFER
,
EKKEHARD
,
KRUEGEL, STEPHAN
,
BENTUM, RALF VAN
Year of Publication
03.01.2008
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DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH REDUCED BORON DIFFUSION
by
KRUEGEL STEPHAN
,
PRUEFER EKKEHARD
,
HEMPEL KLAUS
,
VAN BENTUM RALF
Year of Publication
03.01.2008
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Grabenisolationsstruktur für ein Halbleiterbauelement mit reduzierter Seitenwandverspannung und Verfahren zur Herstellung desselben
by
HEMPEL, KLAUS
,
PRUEFER
,
EKKEHARD
,
KRUEGEL, STEPHAN
Year of Publication
12.07.2007
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