Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
Požela, K., Šilėnas, A., Požela, J., Jucienė, V., Galiev, G. B., Vasil’evskii, J. S., Klimov, E. A.
Published in Applied physics. A, Materials science & processing (01.10.2012)
Published in Applied physics. A, Materials science & processing (01.10.2012)
Get full text
Journal Article
Efficient THz emission from the grating coupled AlGaN GaN heterostructure on sapphire substrate
Kašalynas, I, Venckevi ius, R, Lau adis, J, Jakštas, V, Širmulis, E, Po ela, K, Valušis, G
Published in Journal of physics. Conference series (13.10.2015)
Published in Journal of physics. Conference series (13.10.2015)
Get full text
Journal Article
Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors
Pozela, J, Pozela, K, Silenas, A, Sirmulis, E, Kasalynas, I, Juciene, V, Venckevicius, R
Published in Semiconductors (Woodbury, N.Y.) (01.12.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2014)
Get full text
Journal Article
X-ray luminescence spectra of graded-gap AlxGa1−xAs structures irradiated by alpha particle
Šilėnas, A., Požela, J., Požela, K., Jucienė, V., Dapkus, L.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.12.2011)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.12.2011)
Get full text
Journal Article
Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts
Šilenas, A., Požela, Yu, Požela, K., Jucienė, V., Vasil’evskii, I. S., Galiev, G. B., Pushkarev, S. S., Klimov, E. A.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2013)
Get full text
Journal Article
Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 − xAs and In0.2Ga0.8As/AlxGa1 − xAs heterostructures in high electric fields
Požela, J., Požela, K., Raguotis, R., Jucienė, V.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
Get full text
Journal Article
Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures
Vasil’evskii, I. S., Galiev, G. B., Klimov, E. A., Požela, K., Požela, J., Jucienė, V., Sužiedėlis, A., Žurauskienė, N., Keršulis, S., Stankevič, V.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2011)
Get full text
Journal Article
Transport of electrons in a GaAs quantum well in high electric fields
Požela, J., Požela, K., Raguotis, R., Juciené, V.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2009)
Get full text
Journal Article
SiC and GaAs emitters as selective terahertz radiation sources
Požela, Juras, Širmulis, Edmundas, Požela, Karolis, Šilėnas, Aidis, Jucienė, Vida
Published in Lithuanian journal of physics (2013)
Published in Lithuanian journal of physics (2013)
Get full text
Journal Article
Interaction of electrons with optical phonons localized in a quantum well
Požela, J., Požela, K., Jucienė, V., Sužiedėlis, A., Shkolnik, A. S., Mikhrin, S. S., Mikhrin, V. S.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2009)
Get full text
Journal Article
Radiation hardness of graded-gap AlxGa1−xAs X-ray detectors
Silenas, A., Dapkus, L., Pozela, K., Pozela, J., Juciene, V., Jasutis, V.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.07.2005)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.07.2005)
Get full text
Journal Article
Drift velocity of electrons in quantum wells in high electric fields
Mokerov, V. G., Vasil’evskii, I. S., Galiev, G. B., Požela, J., Požela, K., Sužiedėlis, A., Jucienė, V., Paškević, Č.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2009)
Get full text
Journal Article
An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well
Požela, Yu, Požela, K., Jucienė, V., Balakauskas, S., Evtikhiev, V. P., Schkolnik, A. S., Storasta, Yu, Mekys, A.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2007)
Get full text
Journal Article
Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs
Sirmulis, E, Silenas, A, Pozela, K, Pozela, J, Juciene, V
Published in Applied physics. A, Materials science & processing (01.04.2014)
Published in Applied physics. A, Materials science & processing (01.04.2014)
Get full text
Journal Article
Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields
Vasil’evskii, I. S., Galiev, G. B., Matveev, Yu. A., Klimov, E. A., Požela, J., Požela, K., Sužiedėlis, A., Paškevič, Č., Jucienė, V.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
Get full text
Journal Article
Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Požela, J., Požela, K., Sužiedėlis, A., Jucienė, V., Petkun, V.
Published in Acta physica Polonica, A (01.03.2008)
Published in Acta physica Polonica, A (01.03.2008)
Get full text
Journal Article
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Požela, K., Požela, J., Jucienė, V., Vasil'evskii, I.S., Galiev, G.B., Klimov, E.A., Sužiedėlis, A., Žurauskienė, N., Stankevič, V., Keršulis, S., Paškevič, Č.
Published in Acta physica Polonica, A (01.02.2011)
Published in Acta physica Polonica, A (01.02.2011)
Get full text
Journal Article
A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons
Mokerov, V., Požela, J., Požela, K., Juciene, V.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2006)
Get full text
Journal Article