Properties of nitrogen-implanted SOI substrates
Polchlopek, S.W., Bernstein, G.H., Kwor, R.Y.
Published in IEEE transactions on electron devices (01.02.1993)
Published in IEEE transactions on electron devices (01.02.1993)
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Journal Article
EBIC study of silicon on insulator structures formed by high dose nitrogen implantation
KWOR, R, MATSON, R. J, AL-JASSIM, M. M, POLCHLOPEK, S, HEMMENT, P. L. F, REESON, K. J
Published in Journal of the Electrochemical Society (01.03.1989)
Published in Journal of the Electrochemical Society (01.03.1989)
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Journal Article
Practical considerations for Wafer-Level Electromigration Monitoring in high volume production
Aubel, O., Sullivan, T.D., Massey, D., Lee, T.C., Merrill, T., Polchlopek, S., Strong, A.
Published in 2006 IEEE International Integrated Reliability Workshop Final Report (01.10.2006)
Published in 2006 IEEE International Integrated Reliability Workshop Final Report (01.10.2006)
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Conference Proceeding
Constant-Current Wafer-Level Electromigration Test: Normalization of Data for Production Monitoring
Aubel, O., Sullivan, T.D., Massey, D., Lee, T.C., Merrill, T., Polchlopek, S., Strong, A.
Published in IEEE transactions on device and materials reliability (01.06.2007)
Published in IEEE transactions on device and materials reliability (01.06.2007)
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Magazine Article
Composition of Ferric Thiocyanate at High Concentrations
Polchlopek, Stanley E, Smith, J. Harold
Published in Journal of the American Chemical Society (01.10.1949)
Published in Journal of the American Chemical Society (01.10.1949)
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Journal Article