Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN
Zajac, Marcin, Kaminski, Paweł, Kozlowski, Roman, Litwin-Staszewska, Elzbieta, Piotrzkowski, Ryszard, Grabianska, Karolina, Kucharski, Robert, Jakiela, Rafal
Published in Materials (01.03.2024)
Published in Materials (01.03.2024)
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Journal Article
Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds
Iwinska, Malgorzata, Piotrzkowski, Ryszard, Litwin-Staszewska, Elzbieta, Sochacki, Tomasz, Amilusik, Mikolaj, Fijalkowski, Michal, Lucznik, Boleslaw, Bockowski, Michal
Published in Applied physics express (01.01.2017)
Published in Applied physics express (01.01.2017)
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Journal Article
Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds
Iwinska, Malgorzata, Zajac, Marcin, Lucznik, Boleslaw, Fijalkowski, Michal, Amilusik, Mikolaj, Sochacki, Tomasz, Litwin-Staszewska, Elzbieta, Piotrzkowski, Ryszard, Grzegory, Izabella, Bockowski, Michal
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Nitride-based quantum structures and devices on modified GaN substrates
Perlin, Piotr, Franssen, Gijs, Szeszko, Justyna, Czernecki, R., Targowski, Grzegorz, Kryśko, Marcin, Grzanka, Szymon, Nowak, Grzegorz, Litwin-Staszewska, Elżbieta, Piotrzkowski, Ryszard, Leszczyński, Mike, Łucznik, Bolek, Grzegory, Izabella, Jakieła, Rafał, Albrecht, Martin, Suski, Tadek
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Conference Proceeding
Ni–Au contacts to p-type GaN – Structure and properties
Smalc-Koziorowska, Julita, Grzanka, Szymon, Litwin-Staszewska, Elżbieta, Piotrzkowski, Ryszard, Nowak, Grzegorz, Leszczynski, Michał, Perlin, Piotr, Talik, Ewa, Kozubowski, Jan, Krukowski, Stanisław
Published in Solid-state electronics (01.07.2010)
Published in Solid-state electronics (01.07.2010)
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Journal Article
Electrical transport phenomena in magnesium-doped p-type GaN
Konczewicz, Leszek, Litwin-Staszewska, Elżbieta, Contreras, Sylvie, Piotrzkowski, Ryszard, Dmowski, Lesław
Published in Physica Status Solidi (b) (01.03.2009)
Published in Physica Status Solidi (b) (01.03.2009)
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Journal Article
Conference Proceeding
Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy
Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L., Prystawko, P., Czernecki, R., Konczewicz, L.
Published in Journal of applied physics (01.02.2006)
Published in Journal of applied physics (01.02.2006)
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Journal Article
METHOD OF MANUFACTURING OF MAGNESIUM DOPED InxAlyGa1-x-yN EPITAXIAL LAYER OF p-TYPE CONDUCTIVITY AND MANUFACTURING OF MULTILAYER SEMICONDUCTOR STRUCTURES COMPRISING SUCH LAYER
SUSKI, TADEUSZ, DMOWSKI, LESLAW, LUCZNIK, BOLESLAW, POROWSKI, SYLWESTER, LESZCZYNSKI, MICHAL, LITWIN-STASZEWSKA, ELZBIETA, KRYSKO, MARCIN, PERLIN, PIOTR, CZERNECKI, ROBERT, GRZANKA, SZYMON, PRYSTAWKO, PAWEL, GRZEGORY, IZABELLA, PIOTRZKOWSKI, RYSZARD
Year of Publication 19.11.2009
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Year of Publication 19.11.2009
Patent
Method of production the magnesium doped epitaxial layer of InxAlyGa1-x-yN of type p conductivity, for which )0 x 0,2 and 0 y 0,3 and multilayer semiconductor structures containing such epitaxial layer
PERLIN PIOTR, PIOTRZKOWSKI RYSZARD, GRZEGORY IZABELLA, SUSKI TADEUSZ, KRY KO MARCIN, POROWSKI SYLWESTER, LESZCZY SKI MICHA, PRYSTAWKO PAWE, UCZNIK BOLES AW, CZERNECKI ROBERT, LITWIN-STASZEWSKA EL BIETA, GRZANKA SZYMON, DMOWSKI LES AW
Year of Publication 09.11.2009
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Year of Publication 09.11.2009
Patent