Optimization of diodes using the SPEED concept and CIBH
Pfaffenlehner, M., Felsl, Hans-Peter, Niedernostheide, F.-J, Pfirsch, F., Schulze, H.-J, Baburske, R., Lutz, J.
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
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Conference Proceeding
Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept: Power Semiconductor Devices and Integrates Circuits
BASLER, Thomas, PFAFFENLEHNER, Manfred, FELSL, Hans Peter, NIEDERNOSTHEIDE, Franz-Josef, PFIRSCH, Frank, SCHULZE, Hans-Joachim, BABURSKE, Roman, LUTZ, Josef
Published in IET circuits, devices & systems (2014)
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Published in IET circuits, devices & systems (2014)
Journal Article
Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept
Basler, Thomas, Pfaffenlehner, Manfred, Felsl, Hans Peter, Niedernostheide, Franz-Josef, Pfirsch, Frank, Schulze, Hans-Joachim, Baburske, Roman, Lutz, Josef
Published in IET circuits, devices & systems (01.05.2014)
Published in IET circuits, devices & systems (01.05.2014)
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Journal Article
Semiconductor component with edge termination region
Pfaffenlehner, Manfred, Niedernostheide, Franz-Josef, Mauder, Anton, Dainese, Matteo, Falck, Elmar, Schulze, Hans-Joachim
Year of Publication 19.12.2023
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Year of Publication 19.12.2023
Patent
Semiconductor Component with Edge Termination Region
Pfaffenlehner, Manfred, Niedernostheide, Franz-Josef, Mauder, Anton, Dainese, Matteo, Falck, Elmar, Schulze, Hans-Joachim
Year of Publication 19.08.2021
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Year of Publication 19.08.2021
Patent
Semiconductor component with edge termination region
Pfaffenlehner, Manfred, Niedernostheide, Franz-Josef, Mauder, Anton, Dainese, Matteo, Falck, Elmar, Schulze, Hans-Joachim
Year of Publication 25.05.2021
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Year of Publication 25.05.2021
Patent
Power semiconductor device
Pfaffenlehner, Manfred, Hsieh, Alice Pei-Shan, Brandt, Philip Christoph, Pfirsch, Frank Dieter, Huesken, Holger, Lapidus, Viktoryia
Year of Publication 04.05.2021
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Year of Publication 04.05.2021
Patent
Vertical semiconductor device
Pfaffenlehner, Manfred, Niedernostheide, Franz Josef, Schulze, Holger, Weiss, Christoph, Umbach, Frank, Schulze, Hans-Joachim
Year of Publication 23.03.2021
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Year of Publication 23.03.2021
Patent
Power Semiconductor Device and Method
Pfaffenlehner, Manfred, Pfirsch, Frank Dieter, Scheiper, Thilo, Schraml, Konrad, Bauer, Josef-Georg
Year of Publication 12.11.2020
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Year of Publication 12.11.2020
Patent
Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type
Santos Rodriguez, Francisco Javier, Pfaffenlehner, Manfred, Brandt, Philip Christoph, Pfirsch, Frank Dieter, Stegner, Andre Rainer, Schulze, Hans-Joachim, Auer, Thomas
Year of Publication 17.08.2021
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Year of Publication 17.08.2021
Patent
Power Semiconductor Device
Pfaffenlehner, Manfred, Hsieh, Alice Pei-Shan, Brandt, Philip Christoph, Pfirsch, Frank Dieter, Huesken, Holger, Lapidus, Viktoryia
Year of Publication 09.01.2020
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Year of Publication 09.01.2020
Patent
Semiconductor Component with Edge Termination Region
Pfaffenlehner, Manfred, Niedernostheide, Franz-Josef, Mauder, Anton, Dainese, Matteo, Falck, Elmar, Schulze, Hans-Joachim
Year of Publication 01.08.2019
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Year of Publication 01.08.2019
Patent