Tailoring of field-stop layers in power devices by hydrogen-related donor formation
Niedernostheide, F.-J, Schulze, H.-J, Felsl, H. P., Hille, F., Laven, J. G., Pfaffenlehner, M., Schaffer, C., Schulze, H., Schustereder, W.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Journal Article
Flowfield characteristics of an aerodynamic acoustic levitator
Yarin, A. L., Brenn, G., Keller, J., Pfaffenlehner, M., Ryssel, E., Tropea, C.
Published in Physics of fluids (1994) (01.11.1997)
Published in Physics of fluids (1994) (01.11.1997)
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Journal Article
Novel emitter controlled diode with copper metallization in ultrathin wafer technology: Setting a performance benchmark
Rodriguez, F.J. Santos, Schloegl, D., Hille, F., Brandt, P.C., Pfaffenlehner, M., Stegner, A.R., Haertl, A.
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior
PFAFFENLEHNER, M, BIERMANN, J, SCHAEFFER, C, SCHULZE, H
Published in 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (2004)
Published in 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (2004)
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Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness
Laska, T., Miller, G., Pfaffenlehner, M., Turkes, P., Berger, D., Gutsmann, B., Kanschat, P., Munzer, M.
Published in ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings (2003)
Published in ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings (2003)
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The CIBH Diode - Great Improvement for Ruggedness and Softness of High Voltage Diodes
Felsl, H.P., Pfaffenlehner, M., Schulze, H., Biermann, J., Gutt, T., Schulze, H.-J., Chen, M., Lutz, J.
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
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3.3-kV IGBT modules: How to develop them and what can be achieved?
Schutze, T., Biermann, J., Shpanke, R., Pfaffenlehner, M.
Published in Russian electrical engineering (01.06.2008)
Published in Russian electrical engineering (01.06.2008)
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Journal Article
Optimization of diodes using the SPEED concept and CIBH
Pfaffenlehner, M., Felsl, Hans-Peter, Niedernostheide, F.-J, Pfirsch, F., Schulze, H.-J, Baburske, R., Lutz, J.
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
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Conference Proceeding
Switching ruggedness of high-power diodes
Falck, E., Schulze, H.-J., Schmidt, G., Niedernostheide, F.-J., Pfaffenlehner, M.
Published in 2005 European Conference on Power Electronics and Applications (2005)
Published in 2005 European Conference on Power Electronics and Applications (2005)
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1700V-IGBT3: Field stop technology with optimized trench structure: Trend setting for the high power applications in industry and traction
PFAFFENLEHNER, M, LASKA, T, MALLWITZ, R, MAUDER, A, PFIRSCH, F, SCHAEFFER, C
Year of Publication 2002
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Year of Publication 2002
Conference Proceeding
1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction
Pfaffenlehner, M., Laska, T., Mallwitz, R., Mauder, A., Pfirsch, F., Schaeffer, C.
Published in Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics (2002)
Published in Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics (2002)
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