High-density MIM capacitors with HfO2 dielectrics
Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen
Published in Thin solid films (22.12.2004)
Published in Thin solid films (22.12.2004)
Get full text
Journal Article
DUMMY FIN STRUCTURES AND METHODS OF FORMING SAME
LIN CHIN HSIANG, JENG SHWANG MING, PERNG TSU HSIU, YEN FU TING, TSAI TENG CHUN, LIN KENG CHU
Year of Publication 08.04.2019
Get full text
Year of Publication 08.04.2019
Patent
METHODS OF CUTTING METAL GATES AND STRUCTURES FORMED THEREOF
PERNG TSU HSIU, LIN ZHI CHANG, YANG KAI CHIEH, WU WEI HAO, TSAI TENG CHUN
Year of Publication 08.04.2019
Get full text
Year of Publication 08.04.2019
Patent
HfO2 MIS capacitor with copper gate electrode
PERNG, Tsu-Hsiu, CHIEN, Chao-Hsin, CHEN, Ching-Wei, YANG, Ming-Jui, LEHNEN, Peer, CHANG, Chun-Yen, HUANG, Tiao-Yuan
Published in IEEE electron device letters (01.12.2004)
Published in IEEE electron device letters (01.12.2004)
Get full text
Journal Article
COMBINATION FINFET AND METHODS OF FORMING SAME
TSAI MING HUAN, PERNG TSU HSIU, LEE TUNG YING, WANN CLEMENT HSINGJEN, HUANG YU LIEN
Year of Publication 01.10.2015
Get full text
Year of Publication 01.10.2015
Patent
FINFETS AND METHODS FOR FORMING THE SAME
TSAI MING HUAN, PERNG TSU HSIU, LIU CHI KANG, FAN CHUN HSIANG, LI YUNG TA, WANN CLEMENT HSINGJEN, LIU CHI WEN, HUANG YU LIEN
Year of Publication 04.09.2014
Get full text
Year of Publication 04.09.2014
Patent
A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology
Chih-Chieh Yeh, Chih-Sheng Chang, Hong-Nien Lin, Wei-Hsiung Tseng, Li-Shyue Lai, Tsu-Hsiu Perng, Tsung-Lin Lee, Chang-Yun Chang, Liang-Gi Yao, Chia-Cheng Chen, Ta-Ming Kuan, Xu, J J, Chia-Cheng Ho, Tzu-Chiang Chen, Shyue-Shyh Lin, Hun-Jan Tao, Min Cao, Chih-Hao Chang, Ting-Chu Ko, Neng-Kuo Chen, Shih-Cheng Chen, Chia-Pin Lin, Hsien-Chin Lin, Ching-Yu Chan, Hung-Ta Lin, Shu-Ting Yang, Jyh-Cheng Sheu, Chu-Yun Fu, Shih-Ting Hung, Feng Yuan, Ming-Feng Shieh, Chia-Feng Hu, Wann, C
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
Get full text
Conference Proceeding
INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES
Chen, Ting-Ting, Lin, Keng-Chu, Yen, Fu-Ting, Perng, Tsu-Hsiu, Peng, Yu-Yun
Year of Publication 25.04.2024
Get full text
Year of Publication 25.04.2024
Patent
Methods of cutting metal gates and structures formed thereof
Yang, Kai-Chieh, Wu, Wei-Hao, Lin, Zhi-Chang, Perng, Tsu-Hsiu, Tsai, Teng-Chun
Year of Publication 05.03.2024
Get full text
Year of Publication 05.03.2024
Patent
Inner spacers for gate-all-around semiconductor devices
Chen, Ting-Ting, Lin, Keng-Chu, Yen, Fu-Ting, Perng, Tsu-Hsiu, Peng, Yu-Yun
Year of Publication 26.12.2023
Get full text
Year of Publication 26.12.2023
Patent
High-density MIM capacitors with HfO 2 dielectrics
Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen
Published in Thin solid films (2004)
Published in Thin solid films (2004)
Get full text
Journal Article
Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric
Ching-Wei Chen, Chao-Hsin Chien, Shih-Chich Ou, Tsu-Hsiu Perng, Da-Yuan Lee, Yi-Cheng Chen, Horng-Chich Lin, Tiao-Yuan Huang, Chun-Yen Chang
Published in Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) (2003)
Published in Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) (2003)
Get full text
Conference Proceeding
HfO/sub 2/ MIS capacitor with copper gate electrode
Tsu-Hsiu Perng, Chao-Hsin Chien, Ching-Wei Chen, Ming-Jui Yang, Lehnen, P., Chun-Yen Chang, Tiao-Yuan Huang
Published in IEEE electron device letters (01.12.2004)
Published in IEEE electron device letters (01.12.2004)
Get full text
Journal Article
HfO(2) MIS capacitor with copper gate electrode
Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Yang, Ming-Jui, Lehnen, P, Chang, Chun-Yen, Huang, Tiao-Yuan
Published in IEEE electron device letters (01.12.2004)
Published in IEEE electron device letters (01.12.2004)
Get full text
Journal Article
Semiconductor device having fully oxidized gate oxide layer and method for making the same
Chang, Chia-Chen, Shu, Cheng-Bo, Wang, Pei-Lun, Wu, Yun-Chi, Jhou, Jyun-Guan, Perng, Tsu-Hsiu
Year of Publication 21.05.2024
Get full text
Year of Publication 21.05.2024
Patent
Methods of cutting metal gates and structures formed thereof
Yang, Kai-Chieh, Wu, Wei-Hao, Lin, Zhi-Chang, Perng, Tsu-Hsiu, Tsai, Teng-Chun
Year of Publication 03.01.2023
Get full text
Year of Publication 03.01.2023
Patent
Air spacer formation with a spin-on dielectric material
Chen, Ting-Ting, Ho, Tsai-Jung, Liang, Shuen-Shin, Lin, Keng-Chu, Cheng, Yahru, Ko, Tsung-Han, Perng, Tsu-Hsiu, Ueno, Tetsuji, Wang, Chen-Han
Year of Publication 17.09.2024
Get full text
Year of Publication 17.09.2024
Patent