Electronic switching in phase-change memories
Pirovano, A., Lacaita, A.L., Benvenuti, A., Pellizzer, F., Bez, R.
Published in IEEE transactions on electron devices (01.03.2004)
Published in IEEE transactions on electron devices (01.03.2004)
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Journal Article
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
Pirovano, A., Lacaita, A.L., Pellizzer, F., Kostylev, S.A., Benvenuti, A., Bez, R.
Published in IEEE transactions on electron devices (01.05.2004)
Published in IEEE transactions on electron devices (01.05.2004)
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Journal Article
A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage
Bedeschi, F., Fackenthal, R., Resta, C., Donze, E.M., Jagasivamani, M., Buda, E.C., Pellizzer, F., Chow, D.W., Cabrini, A., Calvi, G., Faravelli, R., Fantini, A., Torelli, G., Mills, D., Gastaldi, R., Casagrande, G.
Published in IEEE journal of solid-state circuits (01.01.2009)
Published in IEEE journal of solid-state circuits (01.01.2009)
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Conference Proceeding
A Phase Change Memory Compact Model for Multilevel Applications
Ventrice, D., Fantini, P., Redaelli, A., Pirovano, A., Benvenuti, A., Pellizzer, F.
Published in IEEE electron device letters (01.11.2007)
Published in IEEE electron device letters (01.11.2007)
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Journal Article
Electronic switching effect and phase-change transition in chalcogenide materials
Redaelli, A., Pirovano, A., Pellizzer, F., Lacaita, A.L., Ielmini, D., Bez, R.
Published in IEEE electron device letters (01.10.2004)
Published in IEEE electron device letters (01.10.2004)
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Journal Article
Analysis of phase distribution in phase-change nonvolatile memories
Ielmini, D., Lacaita, A.L., Pirovano, A., Pellizzer, F., Bez, R.
Published in IEEE electron device letters (01.07.2004)
Published in IEEE electron device letters (01.07.2004)
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Journal Article
Parasitic reset in the programming transient of PCMs
Ielmini, D., Mantegazza, D., Lacaita, A.L., Pirovano, A., Pellizzer, F.
Published in IEEE electron device letters (01.11.2005)
Published in IEEE electron device letters (01.11.2005)
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Journal Article
Single Event Effects in 90-nm Phase Change Memories
Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Pellizzer, F., Vela, M., Ferlet-Cavrois, V.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Switching and programming dynamics in phase-change memory cells
Ielmini, D., Mantegazza, D., Lacaita, A.L., Pirovano, A., Pellizzer, F.
Published in Solid-state electronics (01.11.2005)
Published in Solid-state electronics (01.11.2005)
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Conference Proceeding
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics
Mantegazza, D., Ielmini, D., Pirovano, A., Lacaita, A.L., Varesi, E., Pellizzer, F., Bez, R.
Published in Solid-state electronics (01.04.2008)
Published in Solid-state electronics (01.04.2008)
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Journal Article
Conference Proceeding
Status and Perspectives of Chalcogenide-based CrossPoint Memories
Pellizzer, F., Pirovano, A., Bez, R., Meyer, R. L.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
Phase-change memory technology with self-aligned μTrench cell architecture for 90 nm node and beyond
PIROVANO, A, PELLIZZER, F, MARANGON, T, BEDESCHI, F, FACKENTHAL, R, ATWOOD, G, BEZ, R, TORTORELLI, I, RIGANO, A, HARRIGAN, R, MAGISTRETTI, M, PETRUZZA, P, VARESI, E, REDAELLI, A, ERBETTA, D
Published in Solid-state electronics (01.09.2008)
Published in Solid-state electronics (01.09.2008)
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Conference Proceeding
A new model of gate capacitance as a simple tool to extract MOS parameters
Larcher, L., Pavan, P., Pellizzer, F., Ghidini, G.
Published in IEEE transactions on electron devices (01.05.2001)
Published in IEEE transactions on electron devices (01.05.2001)
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Journal Article
Precise electrical evaluation of active oxides thickness and comparison with TEM measurements
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Conference Proceeding
4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip
Bedeschi, F., Bez, R., Boffino, C., Bonizzoni, E., Buda, E.C., Casagrande, G., Costa, L., Ferraro, M., Gastaldi, R., Khouri, O., Ottogalli, F., Pellizzer, F., Pirovano, A., Resta, C., Torelli, G., Tosi, M.
Published in IEEE journal of solid-state circuits (01.07.2005)
Published in IEEE journal of solid-state circuits (01.07.2005)
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Journal Article
Optimization metrics for Phase Change Memory (PCM) cell architectures
Boniardi, M., Redaelli, A., Cupeta, C., Pellizzer, F., Crespi, L., D'Arrigo, G., Lacaita, A. L., Servalli, G.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding
Electrical characterization of highly reliable 8 nm oxide
GHIDINI, G, ALESSANDRI, M, CLEMENTI, C, DRERA, D, PELLIZZER, F
Published in Journal of the Electrochemical Society (01.02.1997)
Published in Journal of the Electrochemical Society (01.02.1997)
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Journal Article
Breakdown properties of irradiated MOS capacitors
Paccagnell, A., Candelori, A., Milani, A., Formigoni, E., Ghidini, G., Pellizzer, F., Drera, D., Fuochi, P.G., Lavale, M.
Published in IEEE transactions on nuclear science (01.12.1996)
Published in IEEE transactions on nuclear science (01.12.1996)
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Journal Article
Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond
Annunziata, R., Zuliani, P., Borghi, M., De Sandre, G., Scotti, L., Prelini, C., Tosi, M., Tortorelli, I., Pellizzer, F.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Conference Proceeding