Kolloidchemische und grenzflächenphysikalische Aspekte bei der Entwicklung von Kupfer-CMP-Slurries
Nennemann, A., Krüger, L., Puppe, L., Passing, G., Hey, G., Kirchmeyer, S.
Published in Chemie ingenieur technik (01.02.2005)
Published in Chemie ingenieur technik (01.02.2005)
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Evaluation of MOCVD Grown Niobium Nitride Films as Gate Electrode for Advanced CMOS Technology
Thiede, Tobias, Parala, Harish, Reuter, Knud, Passing, Gerd, Kirchmeyer, Stephan, Hinz, Jörn, Lemberger, Martin, Bauer, Anton, Fischer, Roland
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
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