Status of LWIR HgCdTe-on-Silicon FPA Technology
Carmody, M., Pasko, J.G., Edwall, D., Piquette, E., Kangas, M., Freeman, S., Arias, J., Jacobs, R., Mason, W., Stoltz, A., Chen, Y., Dhar, N.K.
Published in Journal of electronic materials (01.09.2008)
Published in Journal of electronic materials (01.09.2008)
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Conference Proceeding
LWIR HgCdTe on Si detector performance and analysis
CARMODY, M, PASKO, J. G, DHAR, N. K, EDWALL, D, BAILEY, R, ARIAS, J, GROENERT, M, ALMEIDA, L. A, DINAN, J. H, CHEN, Y, BRILL, G
Published in Journal of electronic materials (01.06.2006)
Published in Journal of electronic materials (01.06.2006)
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Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance
CARMODY, M, PASKO, J. G, STOLTZ, A. J, CHEN, Y, BRILL, G, DHAR, N. K, EDWALL, D, BAILEY, R, ARIAS, J, CABELLI, S, BAJAJ, J, ALMEIDA, L. A, DINAN, J. H, GROENERT, M
Published in Journal of electronic materials (01.06.2005)
Published in Journal of electronic materials (01.06.2005)
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Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance
CARMODY, M, PASKO, J. G, DHAR, N. K, EDWALL, D, DARASELIA, M, ALMEIDA, L. A, MOLSTAD, J, DINAN, J. H, MARKUNAS, J. K, CHEN, Y, BRILL, G
Published in Journal of electronic materials (01.06.2004)
Published in Journal of electronic materials (01.06.2004)
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Mid-wavelength infrared p-on-n Hg1-xCdxTe heterostructure detectors: 30-120 kelvin state-of-the-art performance
ZANDIAN, Majid, GARNETT, J. D, ARIAS, J. M, VURAL, K, HALL, Donald N. B, DEWAMES, R. E, CARMODY, M, PASKO, J. G, FARRIS, M, CABELLI, C. A, COOPER, D. E, HILDEBRANDT, G, CHOW, J
Published in Journal of electronic materials (01.07.2003)
Published in Journal of electronic materials (01.07.2003)
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Molecular beam epitaxial HgCdTe material characteristics and device performance : reproducibility status
BAJAJ, J, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, KOZLOWSKI, L. J, DE WAMES, R. E, TENNANT, W. E
Published in Journal of electronic materials (01.09.1995)
Published in Journal of electronic materials (01.09.1995)
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MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
ARIAS, J. M, PASKO, J. G, ZANDIAN, M, SHIN, S. H, WILLIAMS, G. M, BUBULAC, L. O, DE WAMES, R. E, TENNANT, W. E
Published in Journal of electronic materials (01.08.1993)
Published in Journal of electronic materials (01.08.1993)
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Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTe
SHIN, S. H, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, BUBULAC, L. O, DE WAMES, R. E
Published in Journal of electronic materials (01.08.1993)
Published in Journal of electronic materials (01.08.1993)
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Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions
ARIAS, J, ZANDIAN, M, PASKO, J. G, SHIN, S. H, BUBULAC, L. O, DEWAMES, R. E, TENNANT, W. E
Published in Journal of applied physics (15.02.1991)
Published in Journal of applied physics (15.02.1991)
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Origin of void defects in Hg1-xCdxTe grown by molecular beam epitaxy
ZANDIAN, M, ARIAS, J. M, BAJAJ, J, PASKO, J. G, BUBULAC, L. O, DEWAMES, R. E
Published in Journal of electronic materials (01.09.1995)
Published in Journal of electronic materials (01.09.1995)
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High performance SWIR HgCdTe detector arrays
Bubulac, L. O., Tennant, W. E., Pasko, J. G., Kozlowski, L. J., Zandian, M., Motamedi, M. E., De Wames, R. E., Bajaj, J., Nayar, N., McLevige, W. V., Gluck, N. S., Melendes, R., Cooper, D. E., Edwall, D. D., Arias, J. M., Hall, R., D’souza, A. I.
Published in Journal of electronic materials (01.06.1997)
Published in Journal of electronic materials (01.06.1997)
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Molecular beam epitaxy HgCdTe growth-induced void defects and their effect on infrared photodiodes
ARIAS, J. M, ZANDIAN, M, BAJAJ, J, PASKO, J. G, BUBULAC, L. O, SHIN, S. H, DE WAMES, R. E
Published in Journal of electronic materials (01.05.1995)
Published in Journal of electronic materials (01.05.1995)
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HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy
ARIAS, J. M, ZANDIAN, M, WILLIAMS, G. M, BLAZEJEWSKI, E. R, DEWAMES, R. E, PASKO, J. G
Published in Journal of applied physics (15.10.1991)
Published in Journal of applied physics (15.10.1991)
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Enhanced arsenic diffusion and activation in HgCdTe
SHIN, S. H, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, BUBULAC, L. O, DE WAMES, R. E
Published in Journal of electronic materials (01.05.1995)
Published in Journal of electronic materials (01.05.1995)
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Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation
DeWames, R.E., Williams, G.M., Pasko, J.G., Vanderwyck, A.H.B.
Published in Journal of crystal growth (01.01.1988)
Published in Journal of crystal growth (01.01.1988)
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Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes
ZANDIAN, M, PASKO, J. G, ARIAS, J. M, DE WAMES, R. E, SHIN, S. H
Published in Journal of electronic materials (01.05.1995)
Published in Journal of electronic materials (01.05.1995)
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MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates
Wijewarnsuriya, P. S., Zandian, M., Edwall, D. D., McLevige, W. V., Chen, C. A., Pasko, J. G., Hildebrandt, G., Chen, A. C., Arias, J. M., D’Souza, A. I., Rujirawat, S., Sivananthan, S.
Published in Journal of electronic materials (01.06.1998)
Published in Journal of electronic materials (01.06.1998)
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Uniform low defect density molecular beam epitaxial HgCdTe
Bajaj, J, Arias, J M, Zandian, M, Edwall, D D
Published in Journal of electronic materials (01.08.1996)
Published in Journal of electronic materials (01.08.1996)
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Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors
D’Souza, A. I., Wijewarnasuriya, P. S., Dewames, R. E., Hildebrandt, G., Bajaj, J., Edwall, D. D., Pasko, J. G., Arias, J. M.
Published in Journal of electronic materials (01.06.1999)
Published in Journal of electronic materials (01.06.1999)
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Dark current generating mechanisms in short wavelength infrared photovoltaic detectors
Dewames, R. E., Edwall, D. D., Zandian, M., Bubulac, L. O., Pasko, J. G., Tennant, W. E., Arias, J. M., D’Souza, A.
Published in Journal of electronic materials (01.06.1998)
Published in Journal of electronic materials (01.06.1998)
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