A point defect based two-dimensional model of the evolution of dislocation loops in silicon during oxidation
HEEMYONG PARK, JONES, K. D, LAW, M. E
Published in Journal of the Electrochemical Society (01.03.1994)
Published in Journal of the Electrochemical Society (01.03.1994)
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Journal Article
The effects of strain on dopant diffusion in silicon
Heemyong Park, Jones, K.S., Slinkman, J.A., Law, M.E.
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
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Conference Proceeding