Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device
Shin, Hee Ju, Seo, Hyun Kyu, Lee, Su Yeon, Park, Minsoo, Park, Seong-Geon, Yang, Min Kyu
Published in Materials (24.03.2022)
Published in Materials (24.03.2022)
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Journal Article
A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)
Seong-Geon Park, Min Kyu Yang, Hyunsu Ju, Dong-Jun Seong, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Lijie Zhang, Yoo Cheol Shin, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Chilhee Chung
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
Electric field dependent switching and degradation of Resistance Random Access Memory
Hosotani, K., Seong-Geon Park, Nishi, Y.
Published in 2009 IEEE International Integrated Reliability Workshop Final Report (01.10.2009)
Published in 2009 IEEE International Integrated Reliability Workshop Final Report (01.10.2009)
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Conference Proceeding
Semiconductor device and method for fabricating the same
PARK, SEONG GEON, PARK, SOON OH, KIM, JONG UK, PARK, JEONG HEE, LEE, JUNG MOO
Year of Publication 16.01.2019
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Year of Publication 16.01.2019
Patent
Highly reliable ReRAM technology with encapsulation process for 20nm and beyond
Dong-Jun Seong, Min Kyu Yang, Hyunsu Ju, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Jinwoo Lee, Gun Hwan Kim, Seol Choi, Lijie Zhang, Seong-Geon Park, Youn Seon Kang, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Eunseung Jung
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
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Conference Proceeding
Method of forming a semiconductor device having a threshold switching device
PARK, SEONG GEON, AHN, DONG HO, HORII HIDEKI, CHOI, SEOL, SEONG, DONG JUN, YANG, MIN KYU, LEE, JUNG MOO
Year of Publication 14.02.2018
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Year of Publication 14.02.2018
Patent
VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
PARK, SEONG GEON, AHN, DONG HO, HORII HIDEKI, CHOI, SEOL, SEONG, DONG JUN, YANG, MIN KYU, LEE, JUNG MOO
Year of Publication 07.02.2018
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Year of Publication 07.02.2018
Patent
First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides
Magyari-Köpe, Blanka, Park, Seong Geon, Lee, Hyung-Dong, Nishi, Yoshio
Published in Journal of materials science (01.11.2012)
Published in Journal of materials science (01.11.2012)
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Journal Article
Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
Cho, Hag-Ju, Lee, Hye Lan, Park, Hong Bae, Jeon, Taek Soo, Park, Seong Geon, Jin, Beom Jun, Kang, Sang Bom, Shin, Yu Gyun, Chung, U-In, Moon, Joo Tae
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article