Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures
Rumyantsev, S L, Shur, M S, Levinshtein, M E, Ivanov, P A, Palmour, J W, Agarwal, A K, Hull, B A, Ryu, Sei-Hyung
Published in Semiconductor science and technology (01.07.2009)
Published in Semiconductor science and technology (01.07.2009)
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Journal Article
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., Jenkins, T.J.
Published in IEEE electron device letters (01.04.1999)
Published in IEEE electron device letters (01.04.1999)
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Journal Article
Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures
Shuman, V B, Mnatsakanov, T T, Levinshtein, M E, Tandoev, A G, Yurkov, S N, Palmour, J W
Published in Semiconductor science and technology (01.08.2011)
Published in Semiconductor science and technology (01.08.2011)
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Journal Article
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
Palmour, J. W., Cheng, L., Pala, V., Brunt, E. V., Lichtenwalner, D. J., Wang, G.-Y, Richmond, J., O'Loughlin, M., Ryu, S., Allen, S. T., Burk, A. A., Scozzie, C.
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
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Conference Proceeding
Isothermal current–voltage characteristics of high-voltage silicon carbide rectifier p–i–n diodes at very high current densities
Levinshtein, M E, Mnatsakanov, T T, Ivanov, P A, Palmour, J W, Das, M K, Hull, B A
Published in Semiconductor science and technology (01.03.2007)
Published in Semiconductor science and technology (01.03.2007)
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Journal Article
Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors
Rumyantsev, S L, Levinshtein, M E, Shur, M S, Cheng, L, Agarwal, A K, Palmour, J W
Published in Semiconductor science and technology (01.12.2013)
Published in Semiconductor science and technology (01.12.2013)
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Journal Article
Progress in SiC: from material growth to commercial device development
Carter, Jr, C.H., Tsvetkov, V.F., Glass, R.C., Henshall, D., Brady, M., Müller, St.G., Kordina, O., Irvine, K., Edmond, J.A., Kong, H.-S., Singh, R., Allen, S.T., Palmour, J.W.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices
Levinshtein, M E, Mnatsakanov, T T, Agarwal, A K, Palmour, J W
Published in Semiconductor science and technology (01.05.2011)
Published in Semiconductor science and technology (01.05.2011)
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Journal Article
Optical switch-on of silicon carbide thyristor
Levinshtein, M.E., Ivanov, P.A., Agarwal, A.K., Palmour, J.W.
Published in Electronics letters (06.06.2002)
Published in Electronics letters (06.06.2002)
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Journal Article
High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor
Rumyantsev, S L, Levinshtein, M E, Shur, M S, Cheng, L, Agarwal, A K, Palmour, J W
Published in Semiconductor science and technology (01.04.2013)
Published in Semiconductor science and technology (01.04.2013)
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Journal Article
Optical triggering of 12 kV, 100 A 4H-SiC thyristors
Rumyantsev, S L, Levinshtein, M E, Shur, M S, Saxena, T, Zhang, Q J, Agarwal, A K, Palmour, J W
Published in Semiconductor science and technology (01.01.2012)
Published in Semiconductor science and technology (01.01.2012)
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Journal Article
Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA
Duong, T. H., Ortiz, J. M., Berning, D. W., Hefner, A. R., Ryu, S.-H., Palmour, J. W.
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
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Conference Proceeding