Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach
Dauelsberg, M., Brien, D., Püsche, R., Schön, O., Yakovlev, E.V., Segal, A.S., Talalaev, R.A.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article
Conference Proceeding
Growth of cubic SiC single crystals by the physical vapor transport technique
Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Püsche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P.
Published in Journal of crystal growth (15.10.2007)
Published in Journal of crystal growth (15.10.2007)
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Journal Article
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
Borga, M., Meneghini, M., Benazzi, D., Canato, E., Püsche, R., Derluyn, J., Abid, I., Medjdoub, F., Meneghesso, G., Zanoni, E.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
Herro, Z.G., Wellmann, P.J., Püsche, R., Hundhausen, M., Ley, L., Maier, M., Masri, P., Winnacker, A.
Published in Journal of crystal growth (01.11.2003)
Published in Journal of crystal growth (01.11.2003)
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Journal Article
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
Kabouche, R., Derluyn, J., Pusche, R., Degroote, S., Germain, M., Pecheux, R., Okada, E., Zegaoui, M., Medjdoub, F.
Published in 2018 13th European Microwave Integrated Circuits Conference (EuMIC) (01.09.2018)
Published in 2018 13th European Microwave Integrated Circuits Conference (EuMIC) (01.09.2018)
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Conference Proceeding