Study of Gate Leakage Current on AlGaN/GaN MOSHEMTs with Atomic Layer Deposited Al₂O₃ Gate Oxide
Ouduangvilai, Konepachith, Lee, Hoon-Ki, Janardhanam, Vallivedu, Reddy, P. R. Shekar, Choi, Chel-Jong, Shim, Kyu-Hwan
Published in Journal of semiconductor technology and science (31.12.2019)
Published in Journal of semiconductor technology and science (31.12.2019)
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Journal Article
Study of Gate Leakage Current on AlGaN/GaN MOS-HEMTs with Atomic Layer Deposited Al2O3 Gate Oxide
Konepachith Ouduangvilai, Hoon-Ki Lee, Vallivedu Janardhanam, P. R. Shekar Reddy, Chel-Jong Choi, Kyu-Hwan Shim
Published in Journal of semiconductor technology and science (01.12.2019)
Published in Journal of semiconductor technology and science (01.12.2019)
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Journal Article