Hybrid-orientation technology (HOT): opportunities and challenges
Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
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Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs
Bedell, S.W., Majumdar, A., Ott, J.A., Arnold, J., Fogel, K., Koester, S.J., Sadana, D.K.
Published in IEEE electron device letters (01.07.2008)
Published in IEEE electron device letters (01.07.2008)
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Journal Article
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
Nayfeh, H.M., Singh, D.V., Hergenrother, J.M., Sleight, J.W., Ren, Z., Dokumaci, O., Black, L., Chidambarrao, D., Venigalla, R., Pan, J., Natzle, W., Tessier, B.L., Ott, J.A., Khare, M., Guarini, K.W., Ieong, M., Haensch, W.
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
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Journal Article
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
Koester, S.J., Hammond, R., Chu, J.O., Mooney, P.M., Ott, J.A., Perraud, L., Jenkins, K.A., Webster, C.S., Lagnado, I., de la Houssaye, P.R.
Published in IEEE electron device letters (01.02.2001)
Published in IEEE electron device letters (01.02.2001)
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Journal Article
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V.
Published in IEEE electron device letters (01.11.2005)
Published in IEEE electron device letters (01.11.2005)
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Journal Article
Threshold voltage control in NiSi-gated MOSFETs through SIIS
Kedzierski, J., Boyd, D., Cabral, C., Ronsheim, P., Zafar, S., Kozlowski, P.M., Ott, J.A., Meikei Ieong
Published in IEEE transactions on electron devices (01.01.2005)
Published in IEEE transactions on electron devices (01.01.2005)
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Journal Article
High- \kappa/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length
Khater, M.H., Zhen Zhang, Jin Cai, Lavoie, C., D'Emic, C., Qingyun Yang, Bin Yang, Guillorn, M., Klaus, D., Ott, J.A., Yu Zhu, Ying Zhang, Changhwan Choi, Frank, M.M., Kam-Leung Lee, Narayanan, V., Dae-Gyu Park, Qiqing Ouyang, Haensch, W.
Published in IEEE electron device letters (01.04.2010)
Published in IEEE electron device letters (01.04.2010)
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Journal Article
Threshold voltage control in NiSi-gated MOSFETs through SIIS
Kedzierski, J, Boyd, D, Cabral, C., Jr, Ronsheim, P, Zafar, S, Kozlowski, P.M, Ott, J.A, Meikei Ieong, Meikei Ieong
Published in IEEE transactions on electron devices (01.01.2005)
Published in IEEE transactions on electron devices (01.01.2005)
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Journal Article
80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Rooks, M.J., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Published in Electronics letters (13.11.2003)
Published in Electronics letters (13.11.2003)
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Journal Article
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
KOESTER, S. J, SAENGER, K. L, CHU, J. O, OUYANG, Q. C, OTT, J. A, JENKINS, K. A, CANAPERI, D. F, TORNELLO, J. A, JAHNES, C. V, STEEN, S. E
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
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Journal Article
Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Jenkins, K.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
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Journal Article
Static frequency divider circuit using 0.15 [micro sign]m gate length Si0.2Ge0.8∕Si0.7Ge0.3 p-MODFETs
Singh, D.V., Koester, S.J., Chu, J.O., Jenkins, K.A., Mooney, P.M., Ouyang, Q.C., Ruiz, N., Ott, J.A., Ralston, D., Wetzel, M., Asbeck, P.M., Saenger, K.L., Patel, V.V., Grill, A.
Published in Electronics letters (2003)
Published in Electronics letters (2003)
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Journal Article
DC and RF Characterization of Sub-100-nm-Gate-Length Strained Ge-on-Insulator p-MOSFETs
Bedell, S.W., Majumdar, A., Jenkins, K.A., Ott, J.A., Arnold, J., Fogel, K., Koester, S.J., Sadana, D.K.
Published in 2008 Device Research Conference (01.06.2008)
Published in 2008 Device Research Conference (01.06.2008)
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Conference Proceeding
Scalability of Direct Silicon Bonded (DSB) Technology for 32nm Node and Beyond
Yin, Haizhou, Wallner, T.A., Li, J., Ott, J.A., Chen, X., Luo, Z.J., Rovedo, N., Fogel, K., Pfeiffer, G., Kleinhenz, R., Bendernagel, R., Sung, C.Y., Sadana, D.K., Takayanagi, M., Ishimaru, K., Crowder, S.W., Park, D., Khare, M., Shahidi, G., Saenger, K.L., Hamaguchi, M., Hasumi, R., Ohuchi, K., Ng, H., Zhang, R., Stein, K.J.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
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Conference Proceeding
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max
Koester, S.J., Hammond, R., Chu, J.O., Mooney, P.M., Ott, J.A., Perraud, L., Jenkins, K.A., Webster, C.S., Lagnado, I., de la Houssaye, P.R.
Published in IEEE electron device letters (01.02.2001)
Published in IEEE electron device letters (01.02.2001)
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Journal Article
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
Hamaguchi, M., Yin, H., Saenger, K.L., Sung, C.Y., Hasumi, R., Iijima, R., Ohuchi, K., Takasu, Y., Ott, J.A., Kang, H., Biscardi, M., Li, J., Domenicucci, A.G., Zhu, Z., Ronsheim, P., Zhang, R., Rovedo, N., Utomo, H., Fogel, K., de Souza, J.P., Sadana, D.K., Takayanagi, M., Park, D., Shahidi, G., Ishimaru, K.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
On the integration of CMOS with hybrid crystal orientations
Yang, M., Chan, V., Ku, S.H., Ieong, M., Shi, L., Chan, K.K., Murthy, C.S., Mo, R.T., Yang, H.S., Lehner, E.A., Surpris, Y., Jamin, F.F., Oldiges, P., Zhang, Y., To, B.N., Holt, J.R., Steen, S.E., Chudzik, M.P., Fried, D.M., Bernstein, K., Zhu, H., Sung, C.Y., Ott, J.A., Boyd, D.C., Rovedo, N.
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
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Conference Proceeding
Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
Qiqing Ouyang, Min Yang, Holt, J., Panda, S., Huajie Chen, Utomo, H., Fischetti, M., Rovedo, N., Jinghong Li, Klymko, N., Wildman, H., Kanarsky, T., Costrini, G., Fried, D.M., Bryant, A., Ott, J.A., Meikei Ieong, Chun-Yung Sung
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
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Conference Proceeding