Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON / I OFF Operating at 473 K
Sarkar, Ritam, Upadhyay, Bhanu B., Bhunia, Swagata, Pokharia, Ravindra S., Nag, Dhiman, Surapaneni, S., Lemettinen, Jori, Suihkonen, Sami, Gribisch, Philipp, Osten, Hans-Jorg, Ganguly, Swaroop, Saha, Dipankar, Laha, Apurba
Published in IEEE transactions on electron devices (01.06.2021)
Published in IEEE transactions on electron devices (01.06.2021)
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Journal Article
Integration of MoSe2 Monolayers with Epitaxial High‑Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles
Ghosh, Kritika, Dhara, Avijit, Dhara, Sajal, Fissel, Andreas, Osten, Hans-Jörg, Roy Chaudhuri, Ayan
Published in ACS applied nano materials (22.07.2022)
Published in ACS applied nano materials (22.07.2022)
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Journal Article
Integration of MoSe 2 Monolayers with Epitaxial High-Κ Gd 2 O 3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles
Ghosh, Kritika, Dhara, Avijit, Dhara, Sajal, Fissel, Andreas, Osten, Hans-Jörg, Roy Chaudhuri, Ayan
Published in ACS applied nano materials (22.07.2022)
Published in ACS applied nano materials (22.07.2022)
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Journal Article
Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties
Xu, Ke, Ranjith, Ramdurai, Laha, Apurba, Parala, Harish, Milanov, Andrian P, Fischer, Roland A, Bugiel, Eberhard, Feydt, Jürgen, Irsen, Stefan, Toader, Teodor, Bock, Claudia, Rogalla, Detlef, Osten, Hans-Jörg, Kunze, Ulrich, Devi, Anjana
Published in Chemistry of materials (28.02.2012)
Published in Chemistry of materials (28.02.2012)
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Journal Article
Atomic Layer Deposition of Gd 2 O 3 and Dy 2 O 3 : A Study of the ALD Characteristics and Structural and Electrical Properties
Xu, Ke, Ranjith, Ramdurai, Laha, Apurba, Parala, Harish, Milanov, Andrian P., Fischer, Roland A., Bugiel, Eberhard, Feydt, Jürgen, Irsen, Stefan, Toader, Teodor, Bock, Claudia, Rogalla, Detlef, Osten, Hans-Jörg, Kunze, Ulrich, Devi, Anjana
Published in Chemistry of materials (28.02.2012)
Published in Chemistry of materials (28.02.2012)
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Journal Article
Epitaxial multi-component rare-earth oxide: A high- k material with ultralow mismatch to Si
Wang, Jinxing, Liu, Tianmo, Wang, Zhongchang, Bugiel, Eberhard, Laha, Apurba, Watahiki, Tatsuro, Shayduk, Roman, Braun, Wolfgang, Fissel, Andreas, Osten, Hans Jörg
Published in Materials letters (15.04.2010)
Published in Materials letters (15.04.2010)
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Journal Article
Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K
Sarkar, Ritam, Upadhyay, Bhanu B., Bhunia, Swagata, Pokharia, Ravindra S., Nag, Dhiman, Surapaneni, S., Lemettinen, Jori, Suihkonen, Sami, Gribisch, Philipp, Osten, Hans-Jorg, Ganguly, Swaroop, Saha, Dipankar, Laha, Apurba
Published in IEEE transactions on electron devices (01.06.2021)
Published in IEEE transactions on electron devices (01.06.2021)
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Journal Article
Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon
Gomeniuk, Yuri V., Nazarov, Alexei, Lysenko, Vladimir, Osten, Hans Jörg, Laha, Apurba
Published in ECS transactions (01.01.2009)
Published in ECS transactions (01.01.2009)
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Journal Article
Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes
Fissel, A., Krugener, J., Bugiel, E., Block, T., Osten, H.J.
Published in 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (01.07.2008)
Published in 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (01.07.2008)
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