Growth of epitaxially stabilized, non-cubic Gd^sub 2^O^sub 3^ on silicon(1?1?1) substrates
Moellers, M, Margenfeld, C, Wietler, TF, Osten, HJ
Published in Journal of crystal growth (15.12.2017)
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Published in Journal of crystal growth (15.12.2017)
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Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Tetzlaff, D., Wietler, T.F., Bugiel, E., Osten, H.J.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Conference Proceeding
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)
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Conference Proceeding
Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide
Dargis, R., Fissel, A., Schwendt, D., Bugiel, E., Krügener, J., Wietler, T., Laha, A., Osten, H.J.
Published in Vacuum (21.10.2010)
Published in Vacuum (21.10.2010)
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Epitaxial growth of Gd sub(2O) sub(3) on surfactant-mediated grown Ge films on Si(0 0 1) substrates
Wietler, T F, Laha, A, Bugiel, E, Czernohorsky, M, Dargis, R, Fissel, A, Osten, HJ
Published in Solid-state electronics (01.08.2009)
Published in Solid-state electronics (01.08.2009)
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MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001)
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Initial stages of praseodymium oxide film formation on Si( [formula omitted])
Müssig, H.-J., Da̧browski, J., Ignatovich, K., Liu, J.P., Zavodinsky, V., Osten, H.J.
Published in Surface science (20.04.2002)
Published in Surface science (20.04.2002)
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Growth of crystalline praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Journal of crystal growth (01.02.2002)
Published in Journal of crystal growth (01.02.2002)
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0.86-nm CET Gate Stacks With Epitaxial High- Dielectrics and FUSI NiSi Metal Electrodes
Gottlob, H.D.B, Echtermeyer, T, Schmidt, M, Mollenhauer, T, Efavi, J.K, Wahlbrink, T, Lemme, M.C, Czernohorsky, M, Bugiel, E, Fissel, A, Osten, H.J, Kurz, H
Published in IEEE electron device letters (01.10.2006)
Published in IEEE electron device letters (01.10.2006)
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Epitaxial growth of praseodymium oxide on silicon
Osten, H.J, Liu, J.P, Bugiel, E, Müssig, H.J, Zaumseil, P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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Growth and properties of strained Si1-x-yGexCy layers
Jain, S C, Osten, H J, Dietrich, B, Rucker, H
Published in Semiconductor science and technology (01.10.1995)
Published in Semiconductor science and technology (01.10.1995)
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Surfactant-controlled solid phase epitaxy of germanium on silicon
Osten, HJ, Klatt, J, Lippert, G, Dietrich, B, Bugiel, E
Published in Physical review letters (20.07.1992)
Published in Physical review letters (20.07.1992)
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Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys
Hattab, A, Perrossier, J.L, Meyer, F, Barthula, M, Osten, H.J, Griesche, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Dopant diffusion control by adding carbon into Si and SiGe: principles and device application
Osten, H.J, Knoll, D, Rücker, H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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