Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC
Rudenko, T.E., Osiyuk, I.N., Tyagulski, I.P., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö.
Published in Solid-state electronics (01.04.2005)
Published in Solid-state electronics (01.04.2005)
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Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes
NAZAROV, A. N, OSIYUK, I. N, SUN, J. M, YANKOV, R. A, SKORUPA, W, TYAGULSKII, I. P, LYSENKO, V. S, PRUCNAL, S, GEBEL, T, REBOHLE, L
Published in Applied physics. B, Lasers and optics (01.03.2007)
Published in Applied physics. B, Lasers and optics (01.03.2007)
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Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al/SiO2/Si Structures
Nazarov, A, Skorupa, W, Osiyuk, I N, Tjagulskii, I P, Lysenko, V S, Yankov, R A, Gebel, T
Published in Journal of the Electrochemical Society (01.01.2005)
Published in Journal of the Electrochemical Society (01.01.2005)
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Journal Article
The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures
Nazarov, A.N., Vovk, J.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Skorupa, W., Yankov, R.A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2005)
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Journal Article
Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction
Lysenko, V S, Tyagulski, I P, Gomeniuk, Y V, Osiyuk, I N, Tkach, I I
Published in Journal of physics. D, Applied physics (07.07.1998)
Published in Journal of physics. D, Applied physics (07.07.1998)
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Journal Article
Thermally activated processes in the buried oxide of SIMOX SOI structures and devices
Lysenko, V.S, Nazarov, A.N, Kilchytska, V.I, Osiyuk, I.N, Tyagulski, I.P, Gomeniuk, Yu.V, Barchuk, I.P
Published in Solid-state electronics (01.05.2001)
Published in Solid-state electronics (01.05.2001)
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Journal Article
Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures
TYAGULSKYY, I. P, OSIYUK, I. N, LYSENKO, V. S, NAZAROV, A. N, HALL, S, BUIU, O, LU, Y, POTTER, R, CHALKER, P
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Conference Proceeding
Journal Article
Electrical characterization of the amorphous SiC-pSi structure
Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N., Mikhnov, A.K.
Published in Microelectronic engineering (1999)
Published in Microelectronic engineering (1999)
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Journal Article
Conference Proceeding
Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors
Lysenko, V.S, Tyagulski, I.P, Gomeniuk, Y.V, Osiyuk, I.N
Published in Microelectronics and reliability (01.04.2000)
Published in Microelectronics and reliability (01.04.2000)
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Journal Article
Flux pinning under the strong electrostatic field in the BiPbSrCaCuO film
Lysenko, V.S., Gomeniuk, Y.V., Tyagulski, I.P., Osiyuk, I.N., Lozovski, V.Z., Varyukhin, V.N.
Published in Physica. C, Superconductivity (10.08.1997)
Published in Physica. C, Superconductivity (10.08.1997)
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Journal Article
Thermally stimulated field emission of charge from traps in the transition layer of SiSiO2 structures
Gomeniuk, Yu.V., Litovski, R.N., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P.
Published in Applied surface science (01.02.1992)
Published in Applied surface science (01.02.1992)
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Journal Article
Transformation of SiSiO2Al structures under RF-plasma treatment
Lysenko, V.S., Nazarov, A.N., Osiyuk, I.N., Turchanikov, V.I.
Published in Applied surface science (01.10.1989)
Published in Applied surface science (01.10.1989)
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