Highly reliable molecular-pore-stacking (MPS)/Cu interconnects featuring best combination of post-etching treatment and resputtering processes
Oshida, Daisuke, Kume, Ippei, Katsuyama, Hirokazu, Ueki, Makoto, Iguchi, Manabu, Yokogawa, Shinji, Inoue, Naoya, Oda, Noriaki, Sakurai, Michio
Published in Microelectronic engineering (25.04.2014)
Published in Microelectronic engineering (25.04.2014)
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Journal Article
Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond
Oshida, Daisuke, Kume, Ippei, Katsuyama, Hirokazu, Taiji, Toshiji, Maruyama, Takuya, Ueki, Makoto, Inoue, Naoya, Iguchi, Manabu, Fujii, Kunihiro, Oda, Noriaki, Sakurai, Michio
Published in Japanese Journal of Applied Physics (01.05.2011)
Published in Japanese Journal of Applied Physics (01.05.2011)
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Journal Article
Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond
Oshida, Daisuke, Kume, Ippei, Katsuyama, Hirokazu, Taiji, Toshiji, Maruyama, Takuya, Ueki, Makoto, Inoue, Naoya, Iguchi, Manabu, Fujii, Kunihiro, Oda, Noriaki, Sakurai, Michio
Published in Japanese Journal of Applied Physics (01.05.2011)
Published in Japanese Journal of Applied Physics (01.05.2011)
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Journal Article
SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND ELECTRONIC SYSTEM
SHIMADA MASAKI, TSUCHIYA FUMIO, TAKAZAWA YOSHIO, OTA NAOYA, OSHIDA DAISUKE, KONISHI SHINYA, TAKEUCHI MIKI
Year of Publication 25.03.2021
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Year of Publication 25.03.2021
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