Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level
Orlov, L.K., nikova, A.A.Mel’, Orlov, M.L., Alyabina, N.A., Ivina, N.L., Neverov, V.N., Horváth, Zs.J.
Published in Physica. E, Low-dimensional systems & nanostructures (01.06.2013)
Published in Physica. E, Low-dimensional systems & nanostructures (01.06.2013)
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Journal Article
Electrical behaviour of Al/SiGe/Si heterostructures: effect of surface treatment and dislocations
Horváth, Zs.J, Ádám, M, Szabó, I, Orlov, L.K, Potapov, A.V, Tolomasov, V.A
Published in Applied surface science (15.07.2004)
Published in Applied surface science (15.07.2004)
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Journal Article
Dislocation pattern formation in epitaxial structures based on SiGe alloys
Yugova, T.G, Vdovin, V.I, Mil’vidskii, M.G, Orlov, L.K, Tolomasov, V.A, Potapov, A.V, Abrosimov, N.V
Published in Thin solid films (30.12.1998)
Published in Thin solid films (30.12.1998)
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Journal Article
Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge–Ge 1− xSi x heterostructures
Orlov, L.K., Potapov, A.V., Rubtsova, R.A., Arapov, Yu, Gorodilov, N., Shelushinina, N., Yang, Fuhua, Leotin, J., Goiran, M.
Published in Thin solid films (1997)
Published in Thin solid films (1997)
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Journal Article
Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge–Ge1−xSix heterostructures
Orlov, L.K., Potapov, A.V., Rubtsova, R.A., Arapov, Yu, Gorodilov, N., Shelushinina, N., Yang, Fuhua, Leotin, J., Goiran, M.
Published in Thin solid films (15.02.1997)
Published in Thin solid films (15.02.1997)
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Journal Article
Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy
Orlov, L.K., Ivina, N.L., Potapov, A.V., Ivin, S.V.
Published in ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) (2000)
Published in ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) (2000)
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Conference Proceeding
Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures
Orlov, L.K., Ivina, N.L., Potapov, A.V., Smyslova, T.N., Vinogradsky, L.M., Horvath, Z.J.
Published in Microelectronics (01.03.2005)
Published in Microelectronics (01.03.2005)
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Journal Article
Quantum hall effect in selectively doped strained p-Ge/Ge 1-xSi x superlattices
Aronzon, B.A., Chumakov, N.K., Leotin, J., Galibert, J., Essaleh, L., Chernov, A.L., Kuznetsov, O.A., Orlov, L.K., Rubtsova, R.A., Mironov, O.A.
Published in Superlattices and microstructures (1993)
Published in Superlattices and microstructures (1993)
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Journal Article
The Hall effect in selectively doped strained-layer Ge-Ge 1−xSi x superlattices superlattices
Mironov, O.A., Kuznetsov, O.A., Orlov, L.K., Rubtsova, R.A., Chernov, A.L., Chistyakov, S.V., Oszwaldowski, M., Aronzon, B.A., Chumakov, N.K.
Published in Superlattices and microstructures (1991)
Published in Superlattices and microstructures (1991)
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Journal Article