Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric
Oproglidis, T. A., Tsormpatzoglou, A., Theodorou, C. G., Karatsori, T. A., Ghibaudo, G., Dimitriadis, C. A.
Published in IEEE transactions on electron devices (01.10.2019)
Published in IEEE transactions on electron devices (01.10.2019)
Get full text
Journal Article
Corrigendum to “Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model” [Solid-State Electron. 170 (2020) 107835]
Oproglidis, T.A., Tassis, D.H., Tsormpatzoglou, A., Ghibaudo, G., Dimitriadis, C.A.
Published in Solid-state electronics (01.09.2020)
Published in Solid-state electronics (01.09.2020)
Get full text
Journal Article
Threshold voltage of p-type triple-gate junctionless transistors
Oproglidis, T.A., Tassis, D.H., Tsormpatzoglou, A., Karatsori, T.A., Theodorou, C.G., Barraud, S., Ghibaudo, G., Dimitriadis, C.A.
Published in Solid-state electronics (01.11.2022)
Published in Solid-state electronics (01.11.2022)
Get full text
Journal Article
Leakage current conduction in metal gate junctionless nanowire transistors
Oproglidis, T.A., Karatsori, T.A., Barraud, S., Ghibaudo, G., Dimitriadis, C.A.
Published in Solid-state electronics (01.05.2017)
Published in Solid-state electronics (01.05.2017)
Get full text
Journal Article