Search Results - "Onai, Takahiro" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Electro-Luminescence from Ultra-Thin Silicon

Electro-Luminescence from Ultra-Thin Silicon

by Saito, Shin-ichi, Hisamoto, Digh, Shimizu, Haruka, Hamamura, Hirotaka, Tsuchiya, Ryuta, Matsui, Yuichi, Mine, Toshiyuki, Arai, Tadashi, Sugii, Nobuyuki, Torii, Kazuyoshi, Kimura, Shin'ichiro, Onai, Takahiro
Published in Japanese Journal of Applied Physics (01.07.2006)

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Journal Article

Synthesis, Monolayer Formation, and Control of Electrical Characteristics of 3-nm-Diameter Gold Nanoparticles

Synthesis, Monolayer Formation, and Control of Electrical Characteristics of 3-nm-Diameter Gold Nanoparticles

by Arai, Tadashi, Saito, Shin-ichi, Fukuda, Hiroshi, Onai, Takahiro
Published in Japanese Journal of Applied Physics (01.07.2005)

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Journal Article

Analytical quantum mechanical model for accumulation capacitance of MOS structures

Analytical quantum mechanical model for accumulation capacitance of MOS structures

by Saito, S., Torii, K., Hiratani, M., Onai, T.
Published in IEEE electron device letters (01.06.2002)

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Journal Article

NONVOLATILE MEMORY ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT

NONVOLATILE MEMORY ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT

by MATSUI, YUICHI, KIMURA, SHINICHIRO, SAITO, SHINICHI, ONAI, TAKAHIRO
Year of Publication 06.12.2007

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Patent

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

by TORII, Kazuyoshi, SHIMAMOTO, Yasuhiro, SAITO, Shin-Ichi, OBATA, Katsunori, YAMAUCHI, Tsuyoshi, HISAMOTO, Digh, ONAI, Takahiro, HIRATANI, Masahiko
Published in Microelectronic engineering (01.05.2003)

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Journal Article

A Circuit For Generating Reference Voltage And An IP Core Equipped With The Circuit

A Circuit For Generating Reference Voltage And An IP Core Equipped With The Circuit

by KURATA HIDEAKI, KOBAYASHI NAOKI, KAWAHARA TAKAYUKI, ONAI TAKAHIRO
Year of Publication 06.12.2002

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Patent

Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

by Tsujikawa, S., Mine, T., Watanabe, K., Shimamoto, Y., Tsuchiya, R., Ohnishi, K., Onai, T., Yugami, J., Kimura, S.
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)

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Conference Proceeding

MAP DISPLAY/CONTROL DEVICE AND MAP DISPLAY/CONTROL METHOD

MAP DISPLAY/CONTROL DEVICE AND MAP DISPLAY/CONTROL METHOD

by NISHIZUKA, TADAYOSHI, HORIE, TAKESHI, ONAI, TAKAHIRO, HIRANO, HIDEAKI
Year of Publication 18.07.2002

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Patent

A Semiconductor Device And A Method Of Manufacturing The Same

A Semiconductor Device And A Method Of Manufacturing The Same

by OOTSUKA FUMIO, WAKAHARA SHOJI, OONISHI KAZUHIRO, ONAI TAKAHIRO
Year of Publication 06.05.2002

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Patent

SEMICONDUCTOR DEVICE FOR SOI STRUCTURE HAVING LEAD CONDUCTOR SUITABLE FOR FINE PATTERNING

SEMICONDUCTOR DEVICE FOR SOI STRUCTURE HAVING LEAD CONDUCTOR SUITABLE FOR FINE PATTERNING

by UCHINO, TAKASHI, NAKAMURA, TOHRU, ONAI, TAKAHIRO, WASHIO, KATSUYOSHI, HORIUCHI, MASATADA
Year of Publication 16.10.2000

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Patent

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al 2O 3 gate dielectrics

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al 2O 3 gate dielectrics

by Torii, Kazuyoshi, Shimamoto, Yasuhiro, Saito, Shin-ichi, Obata, Katsunori, Yamauchi, Tsuyoshi, Hisamoto, Digh, Onai, Takahiro, Hiratani, Masahiko
Published in Microelectronic engineering (2003)

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Journal Article

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

by TAKEDA, TOSHIFUMI, OHTA, HIROYUKI, MIURA, HIDEO, ICHINOSE, KATSUHIKO, ONAI, TAKAHIRO, KUMAGAI, YUKIHIRO, OOTSUKA, FUMIO, IKEDA, SHUJI
Year of Publication 13.06.2002

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Patent

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

by OONISHI, KAZUHIRO, NAKANURA, DOUORU, WASHIO, KAZUYOSHI, ONAI, TAKAHIRO, SAITO, MASAYOSHI, TAMAKI, YOICHI, SHIBA, TAKEO
Year of Publication 01.06.2000

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Patent

SEMICONDUCTOR DEVICE, METHOD OF PRODUCING THE SAME AND SYSTEM USING THE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, METHOD OF PRODUCING THE SAME AND SYSTEM USING THE SEMICONDUCTOR DEVICE

by ODA, KATSUYA, OOUE, EIJI, KONDO, MASAO, ONAI, TAKAHIRO, MASUDA, TORU, WASHIO, KATSUYOSHI, KIYOTA, YUKIHIRO
Year of Publication 27.03.1997

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Patent

Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

by Kondo, M., Oda, K., Ohue, E., Shimamoto, H., Tanabe, M., Onai, T., Washio, K.
Published in IEEE transactions on electron devices (01.06.1998)

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Journal Article

12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

by Onai, T., Ohue, E., Tanabe, M., Washio, K.
Published in IEEE transactions on electron devices (01.12.1997)

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Journal Article

A selective-epitaxial-growth SiGe-base HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

A selective-epitaxial-growth SiGe-base HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

by Washio, K., Ohue, E., Oda, K., Tanabe, M., Shimamoto, H., Onai, T., Kondo, M.
Published in IEEE transactions on electron devices (01.07.1999)

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Journal Article

Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider

Self-aligned metal/IDP Si bipolar technology with 12-ps ECL and 45-GHz dynamic frequency divider

by Washio, K., Ohue, E., Tanabe, M., Onai, T.
Published in IEEE transactions on electron devices (01.11.1997)

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Journal Article

Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method

Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method

by SAITO SHINICHI, ARAI TADASHI, HISAMOTO DIGH, ONAI TAKAHIRO
Year of Publication 07.05.2013

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Patent

A very small bipolar transistor technology with sidewall polycide base electrode for ECL-CMOS LSIs

A very small bipolar transistor technology with sidewall polycide base electrode for ECL-CMOS LSIs

by Shiba, T., Tamaki, Y., Onai, T., Kiyota, Y., Kure, T., Nakamura, T.
Published in IEEE transactions on electron devices (01.09.1996)

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Journal Article