Formation of oriented nanostructures in diamond using metallic nanoparticles
Mehedi, H-A, Hebert, C, Ruffinatto, S, Eon, D, Omnes, F, Gheeraert, E
Published in Nanotechnology (16.11.2012)
Published in Nanotechnology (16.11.2012)
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Journal Article
Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers
Muret, P., Volpe, P.-N., Tran-Thi, T.-N., Pernot, J., Hoarau, C., Omnès, F., Teraji, T.
Published in Diamond and related materials (01.03.2011)
Published in Diamond and related materials (01.03.2011)
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Journal Article
Doping-induced anisotropic lattice strain in homoepitaxial heavily boron-doped diamond
Wojewoda, T., Achatz, P., Ortéga, L., Omnès, F., Marcenat, C., Bourgeois, E., Blase, X., Jomard, F., Bustarret, E.
Published in Diamond and related materials (01.07.2008)
Published in Diamond and related materials (01.07.2008)
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Journal Article
Conference Proceeding
AlGaN-based UV photodetectors
Monroy, E., Calle, F., Pau, J.L., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P.
Published in Journal of crystal growth (01.09.2001)
Published in Journal of crystal growth (01.09.2001)
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Journal Article
Conference Proceeding
Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers
Fernández-Lorenzo, C., Araújo, D., Martín, J., Alcántara, R., Navas, J., Villar, M.P., Alegre, M.P., Volpe, P.N., Omnès, F., Bustarret, E.
Published in Diamond and related materials (01.07.2010)
Published in Diamond and related materials (01.07.2010)
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Journal Article
Conference Proceeding
Isotopic substitution of boron and carbon in superconducting diamond epilayers grown by MPCVD
Achatz, P., Omnès, F., Ortéga, L., Marcenat, C., Vacík, J., Hnatowicz, V., Köster, U., Jomard, F., Bustarret, E.
Published in Diamond and related materials (01.07.2010)
Published in Diamond and related materials (01.07.2010)
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Journal Article
Conference Proceeding
Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis
Araújo, D., Alegre, M.P., García, A.J., Navas, J., Villar, M.P., Bustarret, E., Volpe, P.N., Omnès, F.
Published in Diamond and related materials (01.03.2011)
Published in Diamond and related materials (01.03.2011)
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Journal Article
Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films
Ghodbane, S., Ballutaud, D., Omnès, F., Agnès, C.
Published in Diamond and related materials (01.05.2010)
Published in Diamond and related materials (01.05.2010)
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Journal Article
Experimental indications of a BCS behaviour in superconducting diamond
Sacépé, B., Chapelier, C., Marcenat, C., Kačmarčik, J., Klein, T., Omnès, F., Bustarret, E.
Published in Physica status solidi. A, Applications and materials science (01.10.2006)
Published in Physica status solidi. A, Applications and materials science (01.10.2006)
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Journal Article
Optical Characterization of AlxGa1-xN Alloys (x < 0.7) Grown on Sapphire or Silicon
Leroux, M., Dalmasso, S., Natali, F., Helin, S., Touzi, C., Laügt, S., Passerel, M., Omnes, F., Semond, F., Massies, J., Gibart, P.
Published in Physica status solidi. B. Basic research (01.12.2002)
Published in Physica status solidi. B. Basic research (01.12.2002)
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Journal Article
Conference Proceeding
Investigating the electrical properties of Si donors in AlxGa1-xN alloys
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Journal Article
Conference Proceeding
Low-noise metal-insulator-semiconductor UV photodiodes based on GaN
Monroy, E., Calle, F., Pau, J.L., Muñoz, E., Omnès, F.
Published in Electronics letters (07.12.2000)
Published in Electronics letters (07.12.2000)
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Journal Article
III nitrides and UV detection
Muñoz, E, Monroy, E, Pau, J L, Calle, F, Omnès, F, Gibart, P
Published in Journal of physics. Condensed matter (13.08.2001)
Published in Journal of physics. Condensed matter (13.08.2001)
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Journal Article
Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors
Monroy, E., Calle, F., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P.
Published in Journal of electronic materials (01.03.1999)
Published in Journal of electronic materials (01.03.1999)
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Journal Article
Ordering in undoped hexagonal AlxGa1-xN grown on sapphire (0001) with 0.09 < x < 0.247
Laügt, M., Bellet-Amalric, E., Ruterana, P., Omnès, F.
Published in Physica Status Solidi (b) (01.04.2003)
Published in Physica Status Solidi (b) (01.04.2003)
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