Cr-related energy levels and mechanism of Cr2+ ion photorecharge in ZnS:Cr
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Mukhlyo, M. O., Veligura, L. I.
Published in Physica Status Solidi (b) (01.11.2008)
Published in Physica Status Solidi (b) (01.11.2008)
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Analysis of the active region of overheating temperature in green LEDs based on Group III nitrides
Sukach, G. A., Smertenko, P. S., Oleksenko, P. F., Nakamura, Suji
Published in Technical physics (01.04.2001)
Published in Technical physics (01.04.2001)
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Low-temperature photo-hydro-modification of II–VI and III–V semiconductors
Kamuz, A.M., Oleksenko, P.F., Ovsyannikov, E.Yu, Sizov, F.F., Dyachenko, T.A.
Published in Applied surface science (01.10.1996)
Published in Applied surface science (01.10.1996)
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Effect of erbium fluoride doping on the photoluminescence of SiOx films
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Strelchuk, V. V., Oleksenko, P. F., Veligura, L. I., Nikolenko, A. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
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Journal Article
Cr‐related energy levels and mechanism of Cr 2+ ion photorecharge in ZnS:Cr
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Mukhlyo, M. O., Veligura, L. I.
Published in physica status solidi (b) (01.11.2008)
Published in physica status solidi (b) (01.11.2008)
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Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals
Paiuk, A. P.
Published in Semiconductor physics, quantum electronics, and optoelectronics (30.05.2012)
Published in Semiconductor physics, quantum electronics, and optoelectronics (30.05.2012)
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Journal Article
Effect of erbium fluoride doping on the photoluminescence of SiO x films
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Strelchuk, V. V., Oleksenko, P. F., Veligura, L. I., Nikolenko, A. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2012)
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Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO{sub x} Films after Low-Temperature Annealing
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (15.11.2011)
Published in Semiconductors (Woodbury, N.Y.) (15.11.2011)
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Journal Article
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiOx Films after Low-Temperature Annealing
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
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Journal Article
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing
Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2011)
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Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO{sub x} Films'
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (15.06.2011)
Published in Semiconductors (Woodbury, N.Y.) (15.06.2011)
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Journal Article
Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films”
Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
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