Complete voltage recovery in quantum dot solar cells due to suppression of electron capture
Varghese, A, Yakimov, M, Tokranov, V, Mitin, V, Sablon, K, Sergeev, A, Oktyabrsky, S
Published in Nanoscale (07.04.2016)
Published in Nanoscale (07.04.2016)
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Journal Article
Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide
Kerr, A J, Chagarov, E, Gu, S, Kaufman-Osborn, T, Madisetti, S, Wu, J, Asbeck, P M, Oktyabrsky, S, Kummel, A C
Published in The Journal of chemical physics (14.09.2014)
Published in The Journal of chemical physics (14.09.2014)
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Journal Article
Ga-In intermixing, intrinsic doping, and Wigner localization in the emission spectra of self-organized InP/GaInP quantum dots
Kapaldo, J, Rouvimov, S, Merz, J L, Oktyabrsky, S, Blundell, S A, Bert, N, Brunkov, P, Kalyuzhnyy, N A, Mintairov, S A, Nekrasov, S, Saly, R, Vlasov, A S, Mintairov, A M
Published in Journal of physics. D, Applied physics (31.10.2016)
Published in Journal of physics. D, Applied physics (31.10.2016)
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Journal Article
InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements
Chidambaram, T., Veksler, D., Madisetti, S., Yakimov, M., Tokranov, V., Oktyabrsky, S.
Published in IEEE electron device letters (01.12.2016)
Published in IEEE electron device letters (01.12.2016)
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Journal Article
Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN
Gu, S., Chagarov, E.A., Min, J., Madisetti, S., Novak, S., Oktyabrsky, S., Kerr, A.J., Kaufman-Osborn, T., Kummel, A.C., Asbeck, P.M.
Published in Applied surface science (30.10.2014)
Published in Applied surface science (30.10.2014)
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Journal Article
AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate
Tokranov, V., Nagaiah, P., Yakimov, M., Matyi, R.J., Oktyabrsky, S.
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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Journal Article
Conference Proceeding
All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides
Tokranov, V., Madisetti, S., Yakimov, M., Nagaiah, P., Faleev, N., Oktyabrsky, S.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Journal Article
Conference Proceeding
Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures
Narayan, J., Dovidenko, K., Sharma, A. K., Oktyabrsky, S.
Published in Journal of applied physics (01.09.1998)
Published in Journal of applied physics (01.09.1998)
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Journal Article
Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion
Zhang, X, Mitin, V, Sergeev, A, Sablon, K, Yakimov, M, Oktyabrsky, S, Choi, J K, Strasser, G
Published in Journal of physics. Conference series (01.10.2017)
Published in Journal of physics. Conference series (01.10.2017)
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Journal Article
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
Oktyabrsky, S., Tokranov, V., Yakimov, M., Moore, R., Koveshnikov, S., Tsai, W., Zhu, F., Lee, J.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2006)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.12.2006)
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Journal Article
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy
Lebedev, D. V., Kalyuzhnyy, N. A., Mintairov, S. A., Belyaev, K. G., Rakhlin, M. V., Toropov, A. A., Brunkov, P., Vlasov, A. S., Merz, J., Rouvimov, S., Oktyabrsky, S., Yakimov, M., Mukhin, I. V., Shelaev, A. V., Bykov, V. A., Romanova, A. Yu, Buryak, P. A., Mintairov, A. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2018)
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Journal Article
Optically Decoupled Loss Modulation in a Duo-Cavity VCSEL
van Eisden, J., Yakimov, M., Tokranov, V., Varanasi, M., Mohammed, E.M., Young, I.A., Oktyabrsky, S.R.
Published in IEEE photonics technology letters (01.01.2008)
Published in IEEE photonics technology letters (01.01.2008)
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Journal Article
Aluminum nitride films on different orientations of sapphire and silicon
Dovidenko, K., Oktyabrsky, S., Narayan, J., Razeghi, M.
Published in Journal of applied physics (01.03.1996)
Published in Journal of applied physics (01.03.1996)
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Journal Article
Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide
Oktyabrsky, S., Tokranov, V., Koveshnikov, S., Yakimov, M., Kambhampati, R., Bakhru, H., Moore, R., Tsai, W.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Journal Article
Conference Proceeding
Room-temperature defect tolerance of band-engineered InAs quantum dot heterostructures
Oktyabrsky, S., Lamberti, M., Tokranov, V., Agnello, G., Yakimov, M.
Published in Journal of applied physics (01.09.2005)
Published in Journal of applied physics (01.09.2005)
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Journal Article
Characteristics of integrated QWIP-HBT-LED up-converter
Oktyabrsky, S., Khmyrova, I., Ryzhii, V.
Published in IEEE transactions on electron devices (01.12.2003)
Published in IEEE transactions on electron devices (01.12.2003)
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Journal Article