Ferroelectric HfO2 formation by annealing of a HfO2/Hf/HfO2/Si(100) stacked structure
Kim, Min Gee, Inoue, Hidefumi, Ohmi, Shun-ichiro
Published in Japanese Journal of Applied Physics (25.02.2019)
Published in Japanese Journal of Applied Physics (25.02.2019)
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Journal Article
Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process
Ohmi, Shun-ichiro, Chen, Mengyi, Masahiro, Yasushi
Published in Journal of electronic materials (01.12.2016)
Published in Journal of electronic materials (01.12.2016)
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Journal Article
Pentacene-based depletion load pMOS inverter realized by threshold voltage control utilizing nitrogen-doped LaB6 interfacial layer
Maeda, Yasutaka, Park, Kyung Eun, Hiroki, Mizuha, Komatsu, Yuki, Ohmi, Shun-ichiro
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Effects of Kr sputtering on ultrathin PtHfSi film formation
Yoshimura, Yasuhiko, Ohmi, Shun-ichiro
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films
Molina-Reyes, Joel, Hoshii, Takuya, Ohmi, Shun-Ichiro, Funakubo, Hiroshi, Hori, Atsushi, Fujiwara, Ichiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
The Humidity Dependence of Pentacene Organic Metal-Oxide- Semiconductor Field Effect Transistor
Fadliondi, Fadliondi, Biddinika, Muhammad Kunta, Ohmi, Shun-ichiro
Published in Telkomnika (01.06.2017)
Published in Telkomnika (01.06.2017)
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Journal Article
Influence of Si(100) surface flattening process on nonvolatile memory characteristics of Hf-based MONOS structures
Kudoh, Sohya, Ohmi, Shun-ichiro
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
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Conference Proceeding
Anisotropic high-k deposition for gate-last processing of metal-oxide-semiconductor field-effect transistor utilizing electron-cyclotron-resonance plasma sputtering
Kikuchi, Yoshiaki, Gao, Jun, Sano, Takahiro, Ohmi, Shun-ichiro
Published in Thin solid films (31.01.2012)
Published in Thin solid films (31.01.2012)
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Journal Article
Preface: Special issue on control of semiconductor interfaces (ISCSI-IX)
Shiojima, Kenji, Nakatsuka, Osamu, Kita, Koji, Ohmi, Shun-ichiro, Sadoh, Taizoh
Published in Materials science in semiconductor processing (01.05.2023)
Published in Materials science in semiconductor processing (01.05.2023)
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Journal Article