Search Results - "Ohmaki, Yuji" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

High Mobility Thin Film Transistors with Transparent ZnO Channels

High Mobility Thin Film Transistors with Transparent ZnO Channels

by Nishii, Junya, Hossain, Faruque M., Takagi, Shingo, Aita, Tetsuya, Saikusa, Koji, Ohmaki, Yuji, Ohkubo, Isao, Kishimoto, Shuya, Ohtomo, Akira, Fukumura, Tomoteru, Matsukura, Fumihiro, Ohno, Yuzo, Koinuma, Hideomi, Ohno, Hideo, Kawasaki, Masashi
Published in Japanese Journal of Applied Physics (01.04.2003)

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Journal Article

Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

by Ohmaki, Yuji, Tanimoto, Masashi, Akamatsu, Shiro, Mukai, Takashi
Published in Japanese Journal of Applied Physics (01.11.2006)

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Journal Article

FIELD EFFECT TRANSISTOR AND DEVICE THEREOF

FIELD EFFECT TRANSISTOR AND DEVICE THEREOF

by OHMAKI, YUJI
Year of Publication 21.09.2006

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Patent

Field effect transistor with carrier transit layer in mesa having inclined sides

Field effect transistor with carrier transit layer in mesa having inclined sides

by OHMAKI YUJI
Year of Publication 14.08.2012

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Patent

Field effect transistor with carrier transit layer in mesa having inclined sides

Field effect transistor with carrier transit layer in mesa having inclined sides

by Ohmaki, Yuji
Year of Publication 14.08.2012

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Patent

Field effect transistor and method of manufacturing the same

Field effect transistor and method of manufacturing the same

by AKAMATSU, SHIRO, OHMAKI, YUJI
Year of Publication 04.05.2016

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Patent

Field Effect Transistor and Device Thereof

Field Effect Transistor and Device Thereof

by OHMAKI YUJI
Year of Publication 24.07.2008

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Patent

Field effect transistor and method of manufacturing the same

Field effect transistor and method of manufacturing the same

by AKAMATSU, SHIRO, OHMAKI, YUJI
Year of Publication 30.09.2009

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Patent

Field effect transistor including two group III-V compound semiconductor layers

Field effect transistor including two group III-V compound semiconductor layers

by AKAMATSU SHIRO, OHMAKI YUJI
Year of Publication 14.07.2009

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Patent

Field effect transistor including two group III-V compound semiconductor layers

Field effect transistor including two group III-V compound semiconductor layers

by Akamatsu, Shiro, Ohmaki, Yuji
Year of Publication 14.07.2009

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Patent

FIELD EFFECT TRANSISTOR INCLUDING A GROUP III-V COMPOUND SEMICONDUCTOR LAYER

FIELD EFFECT TRANSISTOR INCLUDING A GROUP III-V COMPOUND SEMICONDUCTOR LAYER

by AKAMATSU SHIRO, OHMAKI YUJI
Year of Publication 12.06.2008

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Patent

Field effect transistor including a group III-V compound semiconductor layer

Field effect transistor including a group III-V compound semiconductor layer

by Akamatsu, Shiro, Ohmaki, Yuji
Year of Publication 04.03.2008

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Patent

Field effect transistor including a group III-V compound semiconductor layer

Field effect transistor including a group III-V compound semiconductor layer

by AKAMATSU SHIRO, OHMAKI YUJI
Year of Publication 04.03.2008

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Patent

Field effect transistor and method of manufacturing the same

Field effect transistor and method of manufacturing the same

by AKAMATSU SHIRO, OHMAKI YUJI
Year of Publication 19.10.2006

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Patent

Field effect transistor and method of manufacturing the same

Field effect transistor and method of manufacturing the same

by AKAMATSU, SHIRO, OHMAKI, YUJI
Year of Publication 27.09.2006

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Patent